Dielectric anomaly in Li-doped zinc oxide thin films grown by sol-gel route

Dhananjay, Satyendra Singh, J. Nagaraju, S. B. Krupanidhi

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22 Citations (SciVal)


Sol-gel route was employed to grow polycrystalline thin films of Li-doped ZnO thin films (Zn1-xLixO, x=0.15). Polycrystalline films were obtained at a growth temperature of 400-500 °C. Ferroelectricity in Zn0.85Li0.15O was verified by examining the temperature variation of the real and imaginary parts of dielectric constant, and from the C-V measurements. The phase transition temperature was found to be 330 K. The room-temperature dielectric constant and dissipation factor were 15.5 and 0.09 respectively, at a frequency of 100 kHz. The films exhibited well-defined hysteresis loop, and the values of spontaneous polarization (Ps) and coercive field were 0.15μC/cm2 and 20 kV/cm, respectively, confirming the presence of ferroelectricity.

Original languageEnglish
Pages (from-to)421-424
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Issue number2
Publication statusPublished - 01-08-2007

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)


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