TY - JOUR
T1 - Dielectric anomaly in Li-doped zinc oxide thin films grown by sol-gel route
AU - Dhananjay, null
AU - Singh, Satyendra
AU - Nagaraju, J.
AU - Krupanidhi, S. B.
PY - 2007/8/1
Y1 - 2007/8/1
N2 - Sol-gel route was employed to grow polycrystalline thin films of Li-doped ZnO thin films (Zn1-xLixO, x=0.15). Polycrystalline films were obtained at a growth temperature of 400-500 °C. Ferroelectricity in Zn0.85Li0.15O was verified by examining the temperature variation of the real and imaginary parts of dielectric constant, and from the C-V measurements. The phase transition temperature was found to be 330 K. The room-temperature dielectric constant and dissipation factor were 15.5 and 0.09 respectively, at a frequency of 100 kHz. The films exhibited well-defined hysteresis loop, and the values of spontaneous polarization (Ps) and coercive field were 0.15μC/cm2 and 20 kV/cm, respectively, confirming the presence of ferroelectricity.
AB - Sol-gel route was employed to grow polycrystalline thin films of Li-doped ZnO thin films (Zn1-xLixO, x=0.15). Polycrystalline films were obtained at a growth temperature of 400-500 °C. Ferroelectricity in Zn0.85Li0.15O was verified by examining the temperature variation of the real and imaginary parts of dielectric constant, and from the C-V measurements. The phase transition temperature was found to be 330 K. The room-temperature dielectric constant and dissipation factor were 15.5 and 0.09 respectively, at a frequency of 100 kHz. The films exhibited well-defined hysteresis loop, and the values of spontaneous polarization (Ps) and coercive field were 0.15μC/cm2 and 20 kV/cm, respectively, confirming the presence of ferroelectricity.
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U2 - 10.1007/s00339-007-4002-0
DO - 10.1007/s00339-007-4002-0
M3 - Article
AN - SCOPUS:34250620192
SN - 0947-8396
VL - 88
SP - 421
EP - 424
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 2
ER -