Dielectric anomaly in Li-doped zinc oxide thin films grown by sol-gel route

Dhananjaya Dhananjay; Satyendra Singh; J. Nagaraju; S. B. Krupanidhi

doi:10.1007/s00339-007-4002-0

Dielectric anomaly in Li-doped zinc oxide thin films grown by sol-gel route

Dhananjay, Satyendra Singh, J. Nagaraju, S. B. Krupanidhi

Department of Physics, Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Article › peer-review

22 Citations (SciVal)

Abstract

Sol-gel route was employed to grow polycrystalline thin films of Li-doped ZnO thin films (Zn_1-xLi_xO, x=0.15). Polycrystalline films were obtained at a growth temperature of 400-500 °C. Ferroelectricity in Zn_0.85Li_0.15O was verified by examining the temperature variation of the real and imaginary parts of dielectric constant, and from the C-V measurements. The phase transition temperature was found to be 330 K. The room-temperature dielectric constant and dissipation factor were 15.5 and 0.09 respectively, at a frequency of 100 kHz. The films exhibited well-defined hysteresis loop, and the values of spontaneous polarization (P_s) and coercive field were 0.15μC/cm² and 20 kV/cm, respectively, confirming the presence of ferroelectricity.

Original language	English
Pages (from-to)	421-424
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	88
Issue number	2
DOIs	https://doi.org/10.1007/s00339-007-4002-0
Publication status	Published - 01-08-2007

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)

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abstract = "Sol-gel route was employed to grow polycrystalline thin films of Li-doped ZnO thin films (Zn1-xLixO, x=0.15). Polycrystalline films were obtained at a growth temperature of 400-500 °C. Ferroelectricity in Zn0.85Li0.15O was verified by examining the temperature variation of the real and imaginary parts of dielectric constant, and from the C-V measurements. The phase transition temperature was found to be 330 K. The room-temperature dielectric constant and dissipation factor were 15.5 and 0.09 respectively, at a frequency of 100 kHz. The films exhibited well-defined hysteresis loop, and the values of spontaneous polarization (Ps) and coercive field were 0.15μC/cm2 and 20 kV/cm, respectively, confirming the presence of ferroelectricity.",

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AU - Singh, Satyendra

AU - Nagaraju, J.

AU - Krupanidhi, S. B.

PY - 2007/8/1

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AB - Sol-gel route was employed to grow polycrystalline thin films of Li-doped ZnO thin films (Zn1-xLixO, x=0.15). Polycrystalline films were obtained at a growth temperature of 400-500 °C. Ferroelectricity in Zn0.85Li0.15O was verified by examining the temperature variation of the real and imaginary parts of dielectric constant, and from the C-V measurements. The phase transition temperature was found to be 330 K. The room-temperature dielectric constant and dissipation factor were 15.5 and 0.09 respectively, at a frequency of 100 kHz. The films exhibited well-defined hysteresis loop, and the values of spontaneous polarization (Ps) and coercive field were 0.15μC/cm2 and 20 kV/cm, respectively, confirming the presence of ferroelectricity.

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Dielectric anomaly in Li-doped zinc oxide thin films grown by sol-gel route

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