INIS
thin films
100%
zinc oxides
100%
doped materials
100%
sol-gel process
100%
dielectrics
100%
films
66%
dielectric constant
66%
polycrystals
66%
growth
33%
values
33%
variations
33%
temperature range 0273-0400 k
33%
phase transformations
33%
transition temperature
33%
khz range
33%
polarization
33%
hysteresis
33%
dissipation factor
33%
Chemistry
Dielectric Constant
100%
Dielectric Material
100%
Ferroelectricity
100%
Zinc Oxide
100%
Permittivity
100%
Ambient Reaction Temperature
50%
Phase Transition Temperature
50%
Polycrystalline Film
50%
Material Science
Zinc Oxide
100%
Sol-Gel
100%
Thin Films
100%
Dielectric Material
100%
Film
66%
Permittivity
66%
Ferroelectricity
66%
ZnO
33%