Dielectric Material-Assisted Optical Tamm Mode Localization for Enhanced Photonic Spin Hall Effect

Amit Kumar Goyal; Divyanshu Divyanshu; Yehia Massoud

doi:10.1109/NANO58406.2023.10231271

Dielectric Material-Assisted Optical Tamm Mode Localization for Enhanced Photonic Spin Hall Effect

Amit Kumar Goyal
, Divyanshu Divyanshu
, Yehia Massoud^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A dielectric material-aided excitation technique is presented in this research to confine optical Tamm mode (OTM) for enhanced photonic spin hall effect (PSHE) generation. The design comprises a bilayer photonic crystal (PhC) structure having a top defect layer. The structural dispersion analysis is carried out to validate the localization of the OTM and the generation of corresponding PSHE. Further, the impact of incidence angle and operating wavelength is also investigated towards enhancing PSHE. With an optimized defect layer thickness of 220 nm, the proposed structure exhibits substantial OTM confinement. Finally, a maximum transverse displacement of ≈ λ/2 at an incidence angle of 46.944° is reported.

Original language	English
Title of host publication	2023 IEEE 23rd International Conference on Nanotechnology, NANO 2023
Publisher	IEEE Computer Society
Pages	878-881
Number of pages	4
ISBN (Electronic)	9798350333466
DOIs	https://doi.org/10.1109/NANO58406.2023.10231271
Publication status	Published - 2023
Event	23rd IEEE International Conference on Nanotechnology, NANO 2023 - Jeju City, Korea, Republic of Duration: 02-07-2023 → 05-07-2023

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
Volume	2023-July
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	23rd IEEE International Conference on Nanotechnology, NANO 2023
Country/Territory	Korea, Republic of
City	Jeju City
Period	02-07-23 → 05-07-23

All Science Journal Classification (ASJC) codes

Bioengineering
Electrical and Electronic Engineering
Materials Chemistry
Condensed Matter Physics

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10.1109/NANO58406.2023.10231271

Cite this

Goyal, A. K., Divyanshu, D., & Massoud, Y. (2023). Dielectric Material-Assisted Optical Tamm Mode Localization for Enhanced Photonic Spin Hall Effect. In 2023 IEEE 23rd International Conference on Nanotechnology, NANO 2023 (pp. 878-881). (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2023-July). IEEE Computer Society. https://doi.org/10.1109/NANO58406.2023.10231271

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title = "Dielectric Material-Assisted Optical Tamm Mode Localization for Enhanced Photonic Spin Hall Effect",

abstract = "A dielectric material-aided excitation technique is presented in this research to confine optical Tamm mode (OTM) for enhanced photonic spin hall effect (PSHE) generation. The design comprises a bilayer photonic crystal (PhC) structure having a top defect layer. The structural dispersion analysis is carried out to validate the localization of the OTM and the generation of corresponding PSHE. Further, the impact of incidence angle and operating wavelength is also investigated towards enhancing PSHE. With an optimized defect layer thickness of 220 nm, the proposed structure exhibits substantial OTM confinement. Finally, a maximum transverse displacement of ≈ λ/2 at an incidence angle of 46.944° is reported.",

author = "Goyal, \{Amit Kumar\} and Divyanshu Divyanshu and Yehia Massoud",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 23rd IEEE International Conference on Nanotechnology, NANO 2023 ; Conference date: 02-07-2023 Through 05-07-2023",

year = "2023",

doi = "10.1109/NANO58406.2023.10231271",

language = "English",

series = "Proceedings of the IEEE Conference on Nanotechnology",

publisher = "IEEE Computer Society",

pages = "878--881",

booktitle = "2023 IEEE 23rd International Conference on Nanotechnology, NANO 2023",

address = "United States",

}

Goyal, AK, Divyanshu, D & Massoud, Y 2023, Dielectric Material-Assisted Optical Tamm Mode Localization for Enhanced Photonic Spin Hall Effect. in 2023 IEEE 23rd International Conference on Nanotechnology, NANO 2023. Proceedings of the IEEE Conference on Nanotechnology, vol. 2023-July, IEEE Computer Society, pp. 878-881, 23rd IEEE International Conference on Nanotechnology, NANO 2023, Jeju City, Korea, Republic of, 02-07-23. https://doi.org/10.1109/NANO58406.2023.10231271

Dielectric Material-Assisted Optical Tamm Mode Localization for Enhanced Photonic Spin Hall Effect. / Goyal, Amit Kumar; Divyanshu, Divyanshu; Massoud, Yehia.
2023 IEEE 23rd International Conference on Nanotechnology, NANO 2023. IEEE Computer Society, 2023. p. 878-881 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2023-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Dielectric Material-Assisted Optical Tamm Mode Localization for Enhanced Photonic Spin Hall Effect

AU - Goyal, Amit Kumar

AU - Divyanshu, Divyanshu

AU - Massoud, Yehia

PY - 2023

Y1 - 2023

N2 - A dielectric material-aided excitation technique is presented in this research to confine optical Tamm mode (OTM) for enhanced photonic spin hall effect (PSHE) generation. The design comprises a bilayer photonic crystal (PhC) structure having a top defect layer. The structural dispersion analysis is carried out to validate the localization of the OTM and the generation of corresponding PSHE. Further, the impact of incidence angle and operating wavelength is also investigated towards enhancing PSHE. With an optimized defect layer thickness of 220 nm, the proposed structure exhibits substantial OTM confinement. Finally, a maximum transverse displacement of ≈ λ/2 at an incidence angle of 46.944° is reported.

AB - A dielectric material-aided excitation technique is presented in this research to confine optical Tamm mode (OTM) for enhanced photonic spin hall effect (PSHE) generation. The design comprises a bilayer photonic crystal (PhC) structure having a top defect layer. The structural dispersion analysis is carried out to validate the localization of the OTM and the generation of corresponding PSHE. Further, the impact of incidence angle and operating wavelength is also investigated towards enhancing PSHE. With an optimized defect layer thickness of 220 nm, the proposed structure exhibits substantial OTM confinement. Finally, a maximum transverse displacement of ≈ λ/2 at an incidence angle of 46.944° is reported.

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U2 - 10.1109/NANO58406.2023.10231271

DO - 10.1109/NANO58406.2023.10231271

M3 - Conference contribution

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T3 - Proceedings of the IEEE Conference on Nanotechnology

SP - 878

EP - 881

BT - 2023 IEEE 23rd International Conference on Nanotechnology, NANO 2023

PB - IEEE Computer Society

T2 - 23rd IEEE International Conference on Nanotechnology, NANO 2023

Y2 - 2 July 2023 through 5 July 2023

ER -

Dielectric Material-Assisted Optical Tamm Mode Localization for Enhanced Photonic Spin Hall Effect

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