Dielectric properties of c-axis oriented Zn1-xMgxO thin films grown by multimagnetron sputtering

Dhananjaya Dhananjay; S. B. Krupanidhi

doi:10.1063/1.2266891

Dielectric properties of c-axis oriented Zn_1-xMg_xO thin films grown by multimagnetron sputtering

Dhananjay, S. B. Krupanidhi

Department of Physics, Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Article › peer-review

47 Citations (SciVal)

Abstract

Zn_1-xMg_x (x=0.3) thin films have been fabricated on Pt/TiO₂/SiO₂/Si substrates using multimagnetron sputtering technique. The films with wurtzite structure showed a (002) preferred orientation. Ferroelectricity in Zn_1-xMg_xO films was established from the temperature dependent dielectric constant and the polarization hysteresis loop. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 °C. The resistivity versus temperature characteristics showed an anomalous increase in the vicinity of the dielectric transition temperature. The Zn _1-xMg_xO thin films exhibit well-defined polarization hysteresis loop, with a remanent polarization of 0.2 μnC/cm² and coercive field of 8 kV/cm at room temperature.

Original language	English
Article number	082905
Journal	Applied Physics Letters
Volume	89
Issue number	8
DOIs	https://doi.org/10.1063/1.2266891
Publication status	Published - 31-08-2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2266891

Cite this

@article{7bb18db510f244f08320df77ffe46537,

title = "Dielectric properties of c-axis oriented Zn1-xMgxO thin films grown by multimagnetron sputtering",

abstract = "Zn1-xMgx (x=0.3) thin films have been fabricated on Pt/TiO2/SiO2/Si substrates using multimagnetron sputtering technique. The films with wurtzite structure showed a (002) preferred orientation. Ferroelectricity in Zn1-xMgxO films was established from the temperature dependent dielectric constant and the polarization hysteresis loop. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 °C. The resistivity versus temperature characteristics showed an anomalous increase in the vicinity of the dielectric transition temperature. The Zn 1-xMgxO thin films exhibit well-defined polarization hysteresis loop, with a remanent polarization of 0.2 μnC/cm2 and coercive field of 8 kV/cm at room temperature.",

author = "Dhananjay and Krupanidhi, {S. B.}",

year = "2006",

month = aug,

day = "31",

doi = "10.1063/1.2266891",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - Dielectric properties of c-axis oriented Zn1-xMgxO thin films grown by multimagnetron sputtering

AU - Dhananjay, null

AU - Krupanidhi, S. B.

PY - 2006/8/31

Y1 - 2006/8/31

N2 - Zn1-xMgx (x=0.3) thin films have been fabricated on Pt/TiO2/SiO2/Si substrates using multimagnetron sputtering technique. The films with wurtzite structure showed a (002) preferred orientation. Ferroelectricity in Zn1-xMgxO films was established from the temperature dependent dielectric constant and the polarization hysteresis loop. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 °C. The resistivity versus temperature characteristics showed an anomalous increase in the vicinity of the dielectric transition temperature. The Zn 1-xMgxO thin films exhibit well-defined polarization hysteresis loop, with a remanent polarization of 0.2 μnC/cm2 and coercive field of 8 kV/cm at room temperature.

AB - Zn1-xMgx (x=0.3) thin films have been fabricated on Pt/TiO2/SiO2/Si substrates using multimagnetron sputtering technique. The films with wurtzite structure showed a (002) preferred orientation. Ferroelectricity in Zn1-xMgxO films was established from the temperature dependent dielectric constant and the polarization hysteresis loop. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 °C. The resistivity versus temperature characteristics showed an anomalous increase in the vicinity of the dielectric transition temperature. The Zn 1-xMgxO thin films exhibit well-defined polarization hysteresis loop, with a remanent polarization of 0.2 μnC/cm2 and coercive field of 8 kV/cm at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=33747843326&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33747843326&partnerID=8YFLogxK

U2 - 10.1063/1.2266891

DO - 10.1063/1.2266891

M3 - Article

AN - SCOPUS:33747843326

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082905

ER -

Dielectric properties of c-axis oriented Zn_1-xMg_xO thin films grown by multimagnetron sputtering

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this