Zn1-xMgx (x=0.3) thin films have been fabricated on Pt/TiO2/SiO2/Si substrates using multimagnetron sputtering technique. The films with wurtzite structure showed a (002) preferred orientation. Ferroelectricity in Zn1-xMgxO films was established from the temperature dependent dielectric constant and the polarization hysteresis loop. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 °C. The resistivity versus temperature characteristics showed an anomalous increase in the vicinity of the dielectric transition temperature. The Zn 1-xMgxO thin films exhibit well-defined polarization hysteresis loop, with a remanent polarization of 0.2 μnC/cm2 and coercive field of 8 kV/cm at room temperature.
|Journal||Applied Physics Letters|
|Publication status||Published - 31-08-2006|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)