Dielectric properties of c-axis oriented Zn1-xMgxO thin films grown by multimagnetron sputtering

Dhananjaya Dhananjay; S. B. Krupanidhi

doi:10.1063/1.2266891

Dielectric properties of c-axis oriented Zn_1-xMg_xO thin films grown by multimagnetron sputtering

Dhananjay
, S. B. Krupanidhi^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

Zn_1-xMg_x (x=0.3) thin films have been fabricated on Pt/TiO₂/SiO₂/Si substrates using multimagnetron sputtering technique. The films with wurtzite structure showed a (002) preferred orientation. Ferroelectricity in Zn_1-xMg_xO films was established from the temperature dependent dielectric constant and the polarization hysteresis loop. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 °C. The resistivity versus temperature characteristics showed an anomalous increase in the vicinity of the dielectric transition temperature. The Zn _1-xMg_xO thin films exhibit well-defined polarization hysteresis loop, with a remanent polarization of 0.2 μnC/cm² and coercive field of 8 kV/cm at room temperature.

Original language	English
Article number	082905
Journal	Applied Physics Letters
Volume	89
Issue number	8
DOIs	https://doi.org/10.1063/1.2266891
Publication status	Published - 31-08-2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Dielectric properties of c-axis oriented Zn1-xMgxO thin films grown by multimagnetron sputtering",

abstract = "Zn1-xMgx (x=0.3) thin films have been fabricated on Pt/TiO2/SiO2/Si substrates using multimagnetron sputtering technique. The films with wurtzite structure showed a (002) preferred orientation. Ferroelectricity in Zn1-xMgxO films was established from the temperature dependent dielectric constant and the polarization hysteresis loop. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 °C. The resistivity versus temperature characteristics showed an anomalous increase in the vicinity of the dielectric transition temperature. The Zn 1-xMgxO thin films exhibit well-defined polarization hysteresis loop, with a remanent polarization of 0.2 μnC/cm2 and coercive field of 8 kV/cm at room temperature.",

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AU - Dhananjay, null

AU - Krupanidhi, S. B.

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Y1 - 2006/8/31

N2 - Zn1-xMgx (x=0.3) thin films have been fabricated on Pt/TiO2/SiO2/Si substrates using multimagnetron sputtering technique. The films with wurtzite structure showed a (002) preferred orientation. Ferroelectricity in Zn1-xMgxO films was established from the temperature dependent dielectric constant and the polarization hysteresis loop. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 °C. The resistivity versus temperature characteristics showed an anomalous increase in the vicinity of the dielectric transition temperature. The Zn 1-xMgxO thin films exhibit well-defined polarization hysteresis loop, with a remanent polarization of 0.2 μnC/cm2 and coercive field of 8 kV/cm at room temperature.

AB - Zn1-xMgx (x=0.3) thin films have been fabricated on Pt/TiO2/SiO2/Si substrates using multimagnetron sputtering technique. The films with wurtzite structure showed a (002) preferred orientation. Ferroelectricity in Zn1-xMgxO films was established from the temperature dependent dielectric constant and the polarization hysteresis loop. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 °C. The resistivity versus temperature characteristics showed an anomalous increase in the vicinity of the dielectric transition temperature. The Zn 1-xMgxO thin films exhibit well-defined polarization hysteresis loop, with a remanent polarization of 0.2 μnC/cm2 and coercive field of 8 kV/cm at room temperature.

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Dielectric properties of c-axis oriented Zn_1-xMg_xO thin films grown by multimagnetron sputtering

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