Doping ZnS and ZnSe thin films with bismuth: A comparison between sandwiching technique and nano-particle incorporation

Gowrish K. Rao

doi:10.1016/j.mssp.2014.04.022

Doping ZnS and ZnSe thin films with bismuth: A comparison between sandwiching technique and nano-particle incorporation

Gowrish K. Rao^*

^*Corresponding author for this work

Department of Physics, Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The paper compares the properties of bismuth doped ZnS and ZnSe films obtained by two different doping techniques: (i) The sandwiching technique, in which two layers of dopant material are sandwiched between chalcogenide material and (ii) nano-particle incorporation technique in which chalcogenide layer is deposited on top of a layer of bismuth nano particles. The carrier concentration, mobility etc. were found by Hall effect measurements. The ease and effectiveness of the two doping techniques have been evaluated.

Original language	English
Pages (from-to)	137-143
Number of pages	7
Journal	Materials Science in Semiconductor Processing
Volume	26
Issue number	1
DOIs	https://doi.org/10.1016/j.mssp.2014.04.022
Publication status	Published - 01-01-2014

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2014.04.022

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AB - The paper compares the properties of bismuth doped ZnS and ZnSe films obtained by two different doping techniques: (i) The sandwiching technique, in which two layers of dopant material are sandwiched between chalcogenide material and (ii) nano-particle incorporation technique in which chalcogenide layer is deposited on top of a layer of bismuth nano particles. The carrier concentration, mobility etc. were found by Hall effect measurements. The ease and effectiveness of the two doping techniques have been evaluated.

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Doping ZnS and ZnSe thin films with bismuth: A comparison between sandwiching technique and nano-particle incorporation

Abstract

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