Abstract
The paper compares the properties of bismuth doped ZnS and ZnSe films obtained by two different doping techniques: (i) The sandwiching technique, in which two layers of dopant material are sandwiched between chalcogenide material and (ii) nano-particle incorporation technique in which chalcogenide layer is deposited on top of a layer of bismuth nano particles. The carrier concentration, mobility etc. were found by Hall effect measurements. The ease and effectiveness of the two doping techniques have been evaluated.
| Original language | English |
|---|---|
| Pages (from-to) | 137-143 |
| Number of pages | 7 |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 26 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 01-01-2014 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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