Dual gate thin film transistors based on indium oxide active layers

Dhananjaya Kekuda; K. Mohan Rao; Amita Tolpadi; C. W. Chu

doi:10.1063/1.3606237

Dual gate thin film transistors based on indium oxide active layers

Dhananjaya Kekuda, K. Mohan Rao, Amita Tolpadi, C. W. Chu

Department of Physics, Manipal Institute of Technology, Manipal

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Polycrystalline Indium Oxide (In₂O₃) thin films were employed as an active channel layer for the fabrication of bottom and top gate thin film transistors. While conventional SiO₂ served as a bottom gate dielectric, cross-linked poly-4-vinylphenol (PVP) was used a top gate dielectric. These nano-crystalline TFTs exhibited n-channel behavior with their transport behavior highly dependent on the thickness of the channel. The correlation between the thickness of the active layer and TFT parameters such as on/off ratio, field-effect mobility, threshold voltage were carried out. The optical spectra revealed a high transmittance in the entire visible region, thus making them promising candidates for the display technology.

Original language	English
Title of host publication	Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010
Pages	1081-1082
Number of pages	2
Volume	1349
Edition	PART A
DOIs	https://doi.org/10.1063/1.3606237
Publication status	Published - 12-09-2011
Event	55th DAE Solid State Physics Symposium 2010 - Manipal, India Duration: 26-12-2010 → 30-12-2010

Conference

Conference	55th DAE Solid State Physics Symposium 2010
Country/Territory	India
City	Manipal
Period	26-12-10 → 30-12-10

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.3606237

Cite this

@inproceedings{cdb68852a3ba4e03b765123e49e9384b,

title = "Dual gate thin film transistors based on indium oxide active layers",

abstract = "Polycrystalline Indium Oxide (In2O3) thin films were employed as an active channel layer for the fabrication of bottom and top gate thin film transistors. While conventional SiO2 served as a bottom gate dielectric, cross-linked poly-4-vinylphenol (PVP) was used a top gate dielectric. These nano-crystalline TFTs exhibited n-channel behavior with their transport behavior highly dependent on the thickness of the channel. The correlation between the thickness of the active layer and TFT parameters such as on/off ratio, field-effect mobility, threshold voltage were carried out. The optical spectra revealed a high transmittance in the entire visible region, thus making them promising candidates for the display technology.",

author = "Dhananjaya Kekuda and Rao, {K. Mohan} and Amita Tolpadi and Chu, {C. W.}",

year = "2011",

month = sep,

day = "12",

doi = "10.1063/1.3606237",

language = "English",

isbn = "9780735409057",

volume = "1349",

pages = "1081--1082",

booktitle = "Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010",

edition = "PART A",

note = "55th DAE Solid State Physics Symposium 2010 ; Conference date: 26-12-2010 Through 30-12-2010",

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TY - GEN

T1 - Dual gate thin film transistors based on indium oxide active layers

AU - Kekuda, Dhananjaya

AU - Rao, K. Mohan

AU - Tolpadi, Amita

AU - Chu, C. W.

PY - 2011/9/12

Y1 - 2011/9/12

N2 - Polycrystalline Indium Oxide (In2O3) thin films were employed as an active channel layer for the fabrication of bottom and top gate thin film transistors. While conventional SiO2 served as a bottom gate dielectric, cross-linked poly-4-vinylphenol (PVP) was used a top gate dielectric. These nano-crystalline TFTs exhibited n-channel behavior with their transport behavior highly dependent on the thickness of the channel. The correlation between the thickness of the active layer and TFT parameters such as on/off ratio, field-effect mobility, threshold voltage were carried out. The optical spectra revealed a high transmittance in the entire visible region, thus making them promising candidates for the display technology.

AB - Polycrystalline Indium Oxide (In2O3) thin films were employed as an active channel layer for the fabrication of bottom and top gate thin film transistors. While conventional SiO2 served as a bottom gate dielectric, cross-linked poly-4-vinylphenol (PVP) was used a top gate dielectric. These nano-crystalline TFTs exhibited n-channel behavior with their transport behavior highly dependent on the thickness of the channel. The correlation between the thickness of the active layer and TFT parameters such as on/off ratio, field-effect mobility, threshold voltage were carried out. The optical spectra revealed a high transmittance in the entire visible region, thus making them promising candidates for the display technology.

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U2 - 10.1063/1.3606237

DO - 10.1063/1.3606237

M3 - Conference contribution

AN - SCOPUS:80052495679

SN - 9780735409057

VL - 1349

SP - 1081

EP - 1082

BT - Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010

T2 - 55th DAE Solid State Physics Symposium 2010

Y2 - 26 December 2010 through 30 December 2010

ER -

Dual gate thin film transistors based on indium oxide active layers

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