Dual gate thin film transistors based on indium oxide active layers

Dhananjaya Kekuda; K. Mohan Rao; Amita Tolpadi; C. W. Chu

doi:10.1063/1.3606237

Dual gate thin film transistors based on indium oxide active layers

Dhananjaya Kekuda^*, K. Mohan Rao, Amita Tolpadi, C. W. Chu

^*Corresponding author for this work

Department of Physics, Manipal Institute of Technology, Manipal

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Polycrystalline Indium Oxide (In₂O₃) thin films were employed as an active channel layer for the fabrication of bottom and top gate thin film transistors. While conventional SiO₂ served as a bottom gate dielectric, cross-linked poly-4-vinylphenol (PVP) was used a top gate dielectric. These nano-crystalline TFTs exhibited n-channel behavior with their transport behavior highly dependent on the thickness of the channel. The correlation between the thickness of the active layer and TFT parameters such as on/off ratio, field-effect mobility, threshold voltage were carried out. The optical spectra revealed a high transmittance in the entire visible region, thus making them promising candidates for the display technology.

Original language	English
Title of host publication	Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010
Pages	1081-1082
Number of pages	2
Volume	1349
Edition	PART A
DOIs	https://doi.org/10.1063/1.3606237
Publication status	Published - 12-09-2011
Event	55th DAE Solid State Physics Symposium 2010 - Manipal, India Duration: 26-12-2010 → 30-12-2010

Publication series

Name	AIP Conference Proceedings
Number	PART A
Volume	1349
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	55th DAE Solid State Physics Symposium 2010
Country/Territory	India
City	Manipal
Period	26-12-10 → 30-12-10

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Access to Document

10.1063/1.3606237

Cite this

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title = "Dual gate thin film transistors based on indium oxide active layers",

abstract = "Polycrystalline Indium Oxide (In2O3) thin films were employed as an active channel layer for the fabrication of bottom and top gate thin film transistors. While conventional SiO2 served as a bottom gate dielectric, cross-linked poly-4-vinylphenol (PVP) was used a top gate dielectric. These nano-crystalline TFTs exhibited n-channel behavior with their transport behavior highly dependent on the thickness of the channel. The correlation between the thickness of the active layer and TFT parameters such as on/off ratio, field-effect mobility, threshold voltage were carried out. The optical spectra revealed a high transmittance in the entire visible region, thus making them promising candidates for the display technology.",

author = "Dhananjaya Kekuda and Rao, {K. Mohan} and Amita Tolpadi and Chu, {C. W.}",

year = "2011",

month = sep,

day = "12",

doi = "10.1063/1.3606237",

language = "English",

isbn = "9780735409057",

volume = "1349",

series = "AIP Conference Proceedings",

number = "PART A",

pages = "1081--1082",

booktitle = "Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010",

edition = "PART A",

note = "55th DAE Solid State Physics Symposium 2010 ; Conference date: 26-12-2010 Through 30-12-2010",

}

Kekuda, D , Rao, KM, Tolpadi, A & Chu, CW 2011, Dual gate thin film transistors based on indium oxide active layers. in Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010. PART A edn, vol. 1349, AIP Conference Proceedings, no. PART A, vol. 1349, pp. 1081-1082, 55th DAE Solid State Physics Symposium 2010, Manipal, India, 26-12-10. https://doi.org/10.1063/1.3606237

Dual gate thin film transistors based on indium oxide active layers. / Kekuda, Dhananjaya ; Rao, K. Mohan; Tolpadi, Amita et al.
Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010. Vol. 1349 PART A. ed. 2011. p. 1081-1082 (AIP Conference Proceedings; Vol. 1349, No. PART A).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Dual gate thin film transistors based on indium oxide active layers

AU - Kekuda, Dhananjaya

AU - Rao, K. Mohan

AU - Tolpadi, Amita

AU - Chu, C. W.

PY - 2011/9/12

Y1 - 2011/9/12

N2 - Polycrystalline Indium Oxide (In2O3) thin films were employed as an active channel layer for the fabrication of bottom and top gate thin film transistors. While conventional SiO2 served as a bottom gate dielectric, cross-linked poly-4-vinylphenol (PVP) was used a top gate dielectric. These nano-crystalline TFTs exhibited n-channel behavior with their transport behavior highly dependent on the thickness of the channel. The correlation between the thickness of the active layer and TFT parameters such as on/off ratio, field-effect mobility, threshold voltage were carried out. The optical spectra revealed a high transmittance in the entire visible region, thus making them promising candidates for the display technology.

AB - Polycrystalline Indium Oxide (In2O3) thin films were employed as an active channel layer for the fabrication of bottom and top gate thin film transistors. While conventional SiO2 served as a bottom gate dielectric, cross-linked poly-4-vinylphenol (PVP) was used a top gate dielectric. These nano-crystalline TFTs exhibited n-channel behavior with their transport behavior highly dependent on the thickness of the channel. The correlation between the thickness of the active layer and TFT parameters such as on/off ratio, field-effect mobility, threshold voltage were carried out. The optical spectra revealed a high transmittance in the entire visible region, thus making them promising candidates for the display technology.

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BT - Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010

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Dual gate thin film transistors based on indium oxide active layers

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