TY - JOUR
T1 - Effect of annealing temperature on the physical properties of NiO thin films and ITO/NiO/Al Schottky diodes
AU - Salunkhe, Parashurama
AU - Kekuda, Dhananjaya
N1 - Funding Information:
Parashurama Salunkhe acknowledges Mr Prashant Nayak, Senior Research Fellow at the Centre for Nano and Soft Matter Sciences (CeNS), Bengaluru, for his support. The authors are thankful to the Manipal Academy of Higher education for financial support under the Dr T M A Pai PhD Scholarship programme. We would like to thank the Micro and Nano Characterization Facility (MNCF) at CeNSE, funded by the Ministry of Electronics and Information Technology (MeitY), Government of India, Indian Institute of Science (IISc), Bengaluru.
Funding Information:
Parashurama Salunkhe acknowledges Mr Prashant Nayak, Senior Research Fellow at the Centre for Nano and Soft Matter Sciences (CeNS), Bengaluru, for his support. The authors are thankful to the Manipal Academy of Higher education for financial support under the Dr T M A Pai PhD Scholarship programme. We would like to thank the Micro and Nano Characterization Facility (MNCF) at CeNSE, funded by the Ministry of Electronics and Information Technology (MeitY), Government of India, Indian Institute of Science (IISc), Bengaluru.
Publisher Copyright:
© 2022, The Author(s).
PY - 2022/9
Y1 - 2022/9
N2 - Herein, fabrication and characterisation of p-NiO/Al Schottky barrier diodes have been realised by dc reactive magnetron sputtering. In addition, effect of post-annealing temperature was studied. A detailed investigation on the physical properties of the NiO thin films was carried out using structural, morphological, optical, and spectroscopic characterisation tools. The metal–semiconductor interface behaviour has been analysed by current–voltage characterisation by implementing the Thermionic emission and Chueng model. The fabricated diode rectification ratio of 103 has been recorded at ± 3 V, and barrier height varied from 0.53 to 1.10 eV as a function of annealed treatment. A space charge-limited conduction mechanism and tunnelling through the interface trap density of p-NiO/Al Schottky diodes were explained by power law characteristics. Furthermore, we have evaluated the Schottky device's electrical characteristics through the ac measurements which include capacitance densities, dielectric constants, tangent loss, AC conductivity, and Nyquist plots. The present work could provide a better understanding and insight into the p-NiO/Al Schottky junction.
AB - Herein, fabrication and characterisation of p-NiO/Al Schottky barrier diodes have been realised by dc reactive magnetron sputtering. In addition, effect of post-annealing temperature was studied. A detailed investigation on the physical properties of the NiO thin films was carried out using structural, morphological, optical, and spectroscopic characterisation tools. The metal–semiconductor interface behaviour has been analysed by current–voltage characterisation by implementing the Thermionic emission and Chueng model. The fabricated diode rectification ratio of 103 has been recorded at ± 3 V, and barrier height varied from 0.53 to 1.10 eV as a function of annealed treatment. A space charge-limited conduction mechanism and tunnelling through the interface trap density of p-NiO/Al Schottky diodes were explained by power law characteristics. Furthermore, we have evaluated the Schottky device's electrical characteristics through the ac measurements which include capacitance densities, dielectric constants, tangent loss, AC conductivity, and Nyquist plots. The present work could provide a better understanding and insight into the p-NiO/Al Schottky junction.
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U2 - 10.1007/s10854-022-08910-6
DO - 10.1007/s10854-022-08910-6
M3 - Article
AN - SCOPUS:85136570543
SN - 0957-4522
VL - 33
SP - 21060
EP - 21074
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 26
ER -