Effect of channel length on the electrical performance of a nanoscale MOSFET

In this paper the effect of the channel length on the electrical parameters of the MOSFET was studied. MOSFETs being used extensively in digital circuit applications have made them the main domain of semiconductor circuits. This work investigates the effect of the channel length on several parameters of a MOSFET that has an impact on its performance. This work aims to explain the relationship between channel length and several key performance indicators, such as drain current (Id), threshold voltage (Vth) and others. In semiconductor devices channel length is a vital factor that helps in determining how effectively the transistor can control current flow. As the channel length decreases, we expect changes in the electric field distribution and carrier dynamics, which can significantly affect performance of the device. When we consider shorter channel lengths, they generally lead to higher drain currents at elevated gate voltages, indicating improved switching capabilities and enhanced performance. Adding to this, variations in transconductance (gm) show that shorter channels exhibit greater sensitivity to changes in gate voltage (Vgs). The relationship between channel length (100 nm, 125 nm and 150 nm) and electrical performance is being studied in this work. HfO2 which is having high dielectric constant is used as a dielectric layer. The device structure showed the Vth of about 2.1 V and 1.4637 V of gm for 100 nm channel length compared to the higher channel lengths.