Effect of composition on SILAR deposited CdxZn1-xS thin films

K. V. Ashith; K. Gowrish Rao

doi:10.1063/1.5028842

Effect of composition on SILAR deposited Cd_xZn_1-xS thin films

K. V. Ashith, K. Gowrish Rao

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In the group of II-VI compound semiconductor, cadmium zinc sulphide (Cd_xZn_1-xS) thin films have broad application in photovoltaic, optoelectronic devices etc. For heterojunction aspects, Cd_xZn_1-xS thin film can be used as heterojunction partner for CdTe as the absorber layer. In this work, CdZnS thin films prepared on glass substrates by Successive Ion Layer Adsorption and Reaction (SILAR) method by varying the composition. The XRD patterns of deposited films showed polycrystalline with the hexagonal phase. The crystallite size of the films was estimated from W-H plot. The bond length of the film varied w.r.to the composition of the Cd_xZn_1-xS films. The urbach energy of the films was calcualted from absorbance data.

Original language	English
Title of host publication	DAE Solid State Physics Symposium 2017
Publisher	American Institute of Physics Inc.
Volume	1942
ISBN (Electronic)	9780735416345
DOIs	https://doi.org/10.1063/1.5028842
Publication status	Published - 10-04-2018
Externally published	Yes
Event	62nd DAE Solid State Physics Symposium 2017 - Anushaktinagar, Mumbai, India Duration: 26-12-2017 → 30-12-2017

Conference

Conference	62nd DAE Solid State Physics Symposium 2017
Country/Territory	India
City	Anushaktinagar, Mumbai
Period	26-12-17 → 30-12-17

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1063/1.5028842

Cite this

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title = "Effect of composition on SILAR deposited CdxZn1-xS thin films",

abstract = "In the group of II-VI compound semiconductor, cadmium zinc sulphide (CdxZn1-xS) thin films have broad application in photovoltaic, optoelectronic devices etc. For heterojunction aspects, CdxZn1-xS thin film can be used as heterojunction partner for CdTe as the absorber layer. In this work, CdZnS thin films prepared on glass substrates by Successive Ion Layer Adsorption and Reaction (SILAR) method by varying the composition. The XRD patterns of deposited films showed polycrystalline with the hexagonal phase. The crystallite size of the films was estimated from W-H plot. The bond length of the film varied w.r.to the composition of the CdxZn1-xS films. The urbach energy of the films was calcualted from absorbance data.",

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year = "2018",

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language = "English",

volume = "1942",

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publisher = "American Institute of Physics Inc.",

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AU - Ashith, K. V.

AU - Gowrish Rao, K.

PY - 2018/4/10

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N2 - In the group of II-VI compound semiconductor, cadmium zinc sulphide (CdxZn1-xS) thin films have broad application in photovoltaic, optoelectronic devices etc. For heterojunction aspects, CdxZn1-xS thin film can be used as heterojunction partner for CdTe as the absorber layer. In this work, CdZnS thin films prepared on glass substrates by Successive Ion Layer Adsorption and Reaction (SILAR) method by varying the composition. The XRD patterns of deposited films showed polycrystalline with the hexagonal phase. The crystallite size of the films was estimated from W-H plot. The bond length of the film varied w.r.to the composition of the CdxZn1-xS films. The urbach energy of the films was calcualted from absorbance data.

AB - In the group of II-VI compound semiconductor, cadmium zinc sulphide (CdxZn1-xS) thin films have broad application in photovoltaic, optoelectronic devices etc. For heterojunction aspects, CdxZn1-xS thin film can be used as heterojunction partner for CdTe as the absorber layer. In this work, CdZnS thin films prepared on glass substrates by Successive Ion Layer Adsorption and Reaction (SILAR) method by varying the composition. The XRD patterns of deposited films showed polycrystalline with the hexagonal phase. The crystallite size of the films was estimated from W-H plot. The bond length of the film varied w.r.to the composition of the CdxZn1-xS films. The urbach energy of the films was calcualted from absorbance data.

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