The structural, optical, morphological, and electrical properties of polycrystalline copper-doped tin sulfide (Cu-Sn2S3) thin films with different concentrations of Cu dopants were synthesized using the spray pyrolysis method. Structural characterizations (powder XRD) revealed orthorhombic Sn2S3 crystal structure with Pmma space group. The XRD spectra showed improved crystalline quality and preferential orientation for the Cu-doped Sn2S3 thin films. Morphology of the prepared samples revealed sharp needle-shaped grains uniformly distributed throughout the sample. The UV spectroscopy results show 70–75% transmittance for 6 wt.% and 8 wt.% Cu-doped Sn2S3 thin films in the visible region. The bandgap values are decreased for the 4 wt.% sample and increased with an increase in the Cu concentration for 2 wt.%, 6 wt.%, and 8 wt.% with Sn2S3 thin films. The dielectric constant, dielectric loss, and electrical and optical properties were analyzed using UV data. Negative Hall coefficient values of prepared samples confirm the n-type semiconductor nature. Electrical conductivity increases with an increase in Cu concentration. These results indicate that the samples have potential applications in the optoelectronic field.
All Science Journal Classification (ASJC) codes
- General Materials Science
- General Engineering