Effect of electron beam irradiation on thermally evaporated Ge2Sb2Te5 thin films

Deepangkar Sarkar; G. Sanjeev; T. N. Bhat; M. G. Mahesha

Effect of electron beam irradiation on thermally evaporated Ge₂Sb₂Te₅ thin films

Deepangkar Sarkar
, G. Sanjeev
, T. N. Bhat
, M. G. Mahesha^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Ge₂Sb₂Te₅ (GST) thin films have been grown by thermal evaporation technique. The grown films have been irradiated with electron beam at various doses. As-deposited and irradiated films have been characterized for their structural, optical and electrical properties. Raman spectra has been recorded to get more insight on structural rearrangement that happened during the irradiation process. Detailed analysis of these data has been made to explore the behavior of system under electron irradiation environment.

Original language	English
Pages (from-to)	84-89
Number of pages	6
Journal	Journal of Optoelectronics and Advanced Materials
Volume	20
Issue number	1-2
Publication status	Published - 01-01-2018

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

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title = "Effect of electron beam irradiation on thermally evaporated Ge2Sb2Te5 thin films",

abstract = "Ge2Sb2Te5 (GST) thin films have been grown by thermal evaporation technique. The grown films have been irradiated with electron beam at various doses. As-deposited and irradiated films have been characterized for their structural, optical and electrical properties. Raman spectra has been recorded to get more insight on structural rearrangement that happened during the irradiation process. Detailed analysis of these data has been made to explore the behavior of system under electron irradiation environment.",

author = "Deepangkar Sarkar and G. Sanjeev and Bhat, \{T. N.\} and Mahesha, \{M. G.\}",

year = "2018",

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language = "English",

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issn = "1454-4164",

publisher = "National Institute of Optoelectronics",

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TY - JOUR

T1 - Effect of electron beam irradiation on thermally evaporated Ge2Sb2Te5 thin films

AU - Sarkar, Deepangkar

AU - Sanjeev, G.

AU - Bhat, T. N.

AU - Mahesha, M. G.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Ge2Sb2Te5 (GST) thin films have been grown by thermal evaporation technique. The grown films have been irradiated with electron beam at various doses. As-deposited and irradiated films have been characterized for their structural, optical and electrical properties. Raman spectra has been recorded to get more insight on structural rearrangement that happened during the irradiation process. Detailed analysis of these data has been made to explore the behavior of system under electron irradiation environment.

AB - Ge2Sb2Te5 (GST) thin films have been grown by thermal evaporation technique. The grown films have been irradiated with electron beam at various doses. As-deposited and irradiated films have been characterized for their structural, optical and electrical properties. Raman spectra has been recorded to get more insight on structural rearrangement that happened during the irradiation process. Detailed analysis of these data has been made to explore the behavior of system under electron irradiation environment.

UR - https://www.scopus.com/pages/publications/85044987356

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M3 - Article

AN - SCOPUS:85044987356

SN - 1454-4164

VL - 20

SP - 84

EP - 89

JO - Journal of Optoelectronics and Advanced Materials

JF - Journal of Optoelectronics and Advanced Materials

IS - 1-2

ER -

Effect of electron beam irradiation on thermally evaporated Ge₂Sb₂Te₅ thin films

Abstract

All Science Journal Classification (ASJC) codes

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