TY - JOUR
T1 - Effect of electron beam on structural, linear and nonlinear properties of nanostructured Fluorine doped ZnO thin films
AU - Antony, Albin
AU - Pramodini, S.
AU - Kityk, I. V.
AU - Abd-Lefdil, M.
AU - Douayar, A.
AU - Cherkaoui El Moursli, F.
AU - Sanjeev, Ganesh
AU - Manjunatha, K. B.
AU - Poornesh, P.
N1 - Publisher Copyright:
© 2017 Elsevier B.V.
PY - 2017/10/1
Y1 - 2017/10/1
N2 - Electron beam induced effects on Fluorine doped ZnO thin films (FZO) grown by chemical spray pyrolysis deposition technique were studied. The samples were exposed to 8 MeV electron beam at different dose rate ranging from 1 kGy to 4 kGy. All films exhibit a polycrystalline nature which shows an increase in crystallanity with irradiation dosages. The electron beam irradiation effectively controls the films surface morphology and its linear optical characteristics. Z-Scan technique was employed to evaluate the sign and magnitude of nonlinear refractive index and nonlinear absorption coefficient using a continuous wave laser at 632.8 nm as light source. Enhancement in the third order nonlinear optical properties was were noted due to electron beam irradiation. Tailoring the physical and NLO properties by electron beam, the FZO thin films becomes a promising candidate for various optoelectronic applications such as phase change memory devices, optical pulse compression, optical switching and laser pulse narrowing.
AB - Electron beam induced effects on Fluorine doped ZnO thin films (FZO) grown by chemical spray pyrolysis deposition technique were studied. The samples were exposed to 8 MeV electron beam at different dose rate ranging from 1 kGy to 4 kGy. All films exhibit a polycrystalline nature which shows an increase in crystallanity with irradiation dosages. The electron beam irradiation effectively controls the films surface morphology and its linear optical characteristics. Z-Scan technique was employed to evaluate the sign and magnitude of nonlinear refractive index and nonlinear absorption coefficient using a continuous wave laser at 632.8 nm as light source. Enhancement in the third order nonlinear optical properties was were noted due to electron beam irradiation. Tailoring the physical and NLO properties by electron beam, the FZO thin films becomes a promising candidate for various optoelectronic applications such as phase change memory devices, optical pulse compression, optical switching and laser pulse narrowing.
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U2 - 10.1016/j.physe.2017.08.015
DO - 10.1016/j.physe.2017.08.015
M3 - Article
AN - SCOPUS:85028057519
SN - 1386-9477
VL - 94
SP - 190
EP - 195
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
ER -