Electron beam induced effects on Fluorine doped ZnO thin films (FZO) grown by chemical spray pyrolysis deposition technique were studied. The samples were exposed to 8 MeV electron beam at different dose rate ranging from 1 kGy to 4 kGy. All films exhibit a polycrystalline nature which shows an increase in crystallanity with irradiation dosages. The electron beam irradiation effectively controls the films surface morphology and its linear optical characteristics. Z-Scan technique was employed to evaluate the sign and magnitude of nonlinear refractive index and nonlinear absorption coefficient using a continuous wave laser at 632.8 nm as light source. Enhancement in the third order nonlinear optical properties was were noted due to electron beam irradiation. Tailoring the physical and NLO properties by electron beam, the FZO thin films becomes a promising candidate for various optoelectronic applications such as phase change memory devices, optical pulse compression, optical switching and laser pulse narrowing.
|Number of pages
|Physica E: Low-Dimensional Systems and Nanostructures
|Published - 01-10-2017
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics