TY - JOUR
T1 - Effect of indium doping on the optoelectronic properties of ZnSe films
AU - Moger, Sahana Nagappa
AU - Mahesha, M. G.
N1 - Funding Information:
The authors are grateful to UGC DAE CSR, Indore, Govt. of India (CSR–IC–MSRSR-11/CRS-219/2017–18/1300) for financial assistance.
Publisher Copyright:
© 2022
PY - 2022/10/31
Y1 - 2022/10/31
N2 - Polycrystalline In:ZnSe films were prepared by the thermal co-evaporation method, where high purity ZnSe and In2Se3 powders are taken as source materials. Orderly change in the X-ray diffraction peak position and red shift in the optical absorption edge have confirmed the incorporation of the dopant in the system. Photoluminescence spectra showed that the doped system has a Zn vacancy, which is in line with energy dispersive spectroscopy measurements. The chemical state of the doped films i.e., Zn2+, In3+ and Se2− was analysed by Raman and X-ray photoelectron spectroscopy (XPS); XPS has also indicated the incorporation of oxygen in small fractions which improves the conductivity of the films. The electrical investigation has revealed that electrical properties altered by doping and majority charge carriers are electrons and carrier density is in the order of 1015 cm−3. Films with 15 at. % In exhibited good photoresponse in the visible range and suitable for photodetector applications.
AB - Polycrystalline In:ZnSe films were prepared by the thermal co-evaporation method, where high purity ZnSe and In2Se3 powders are taken as source materials. Orderly change in the X-ray diffraction peak position and red shift in the optical absorption edge have confirmed the incorporation of the dopant in the system. Photoluminescence spectra showed that the doped system has a Zn vacancy, which is in line with energy dispersive spectroscopy measurements. The chemical state of the doped films i.e., Zn2+, In3+ and Se2− was analysed by Raman and X-ray photoelectron spectroscopy (XPS); XPS has also indicated the incorporation of oxygen in small fractions which improves the conductivity of the films. The electrical investigation has revealed that electrical properties altered by doping and majority charge carriers are electrons and carrier density is in the order of 1015 cm−3. Films with 15 at. % In exhibited good photoresponse in the visible range and suitable for photodetector applications.
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U2 - 10.1016/j.tsf.2022.139492
DO - 10.1016/j.tsf.2022.139492
M3 - Article
AN - SCOPUS:85138473248
SN - 0040-6090
VL - 760
JO - Thin Solid Films
JF - Thin Solid Films
M1 - 139492
ER -