Effect of ITC's on linearity and distortion performance of Junctionless tunnel field effect transistor

Bhaskar Awadhiya; Sunil Pandey; Kaushal Nigam; Pravin N. Kondekar

doi:10.1016/j.spmi.2017.06.036

Effect of ITC's on linearity and distortion performance of Junctionless tunnel field effect transistor

Bhaskar Awadhiya^*
, Sunil Pandey
, Kaushal Nigam
, Pravin N. Kondekar

^*Corresponding author for this work

Research output: Contribution to journal › Review article › peer-review

35 Citations (Scopus)

Abstract

This paper presents an extensive survey on impact of interface trap charges on JLTFET. Objective of our work is to analyze degradation in performance of our device due to presence of interface trap charge present between Si-SiO₂ interface. Effect of interface trap charges on drain current, transconductance, higher order transconductance, linearity and distortion parameter (VIP2, VIP3, IIP3, IMD3, Zero crossover point, 1-dB compression point) has been studied. High linearity and low distortion demands high value of VIP2, VIP3, IIP3, 1-dB compression point and low value of IMD3, Zero crossover point, higher order transconductance parameter. Through our simulations we have found that presence of interface trap charges leads to curtailment in reliability and life time of device.

Original language	English
Pages (from-to)	293-301
Number of pages	9
Journal	Superlattices and Microstructures
Volume	111
DOIs	https://doi.org/10.1016/j.spmi.2017.06.036
Publication status	Published - 11-2017

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.spmi.2017.06.036

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title = "Effect of ITC's on linearity and distortion performance of Junctionless tunnel field effect transistor",

abstract = "This paper presents an extensive survey on impact of interface trap charges on JLTFET. Objective of our work is to analyze degradation in performance of our device due to presence of interface trap charge present between Si-SiO2 interface. Effect of interface trap charges on drain current, transconductance, higher order transconductance, linearity and distortion parameter (VIP2, VIP3, IIP3, IMD3, Zero crossover point, 1-dB compression point) has been studied. High linearity and low distortion demands high value of VIP2, VIP3, IIP3, 1-dB compression point and low value of IMD3, Zero crossover point, higher order transconductance parameter. Through our simulations we have found that presence of interface trap charges leads to curtailment in reliability and life time of device.",

author = "Bhaskar Awadhiya and Sunil Pandey and Kaushal Nigam and Kondekar, \{Pravin N.\}",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd",

year = "2017",

month = nov,

doi = "10.1016/j.spmi.2017.06.036",

language = "English",

volume = "111",

pages = "293--301",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

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T1 - Effect of ITC's on linearity and distortion performance of Junctionless tunnel field effect transistor

AU - Awadhiya, Bhaskar

AU - Pandey, Sunil

AU - Nigam, Kaushal

AU - Kondekar, Pravin N.

PY - 2017/11

Y1 - 2017/11

N2 - This paper presents an extensive survey on impact of interface trap charges on JLTFET. Objective of our work is to analyze degradation in performance of our device due to presence of interface trap charge present between Si-SiO2 interface. Effect of interface trap charges on drain current, transconductance, higher order transconductance, linearity and distortion parameter (VIP2, VIP3, IIP3, IMD3, Zero crossover point, 1-dB compression point) has been studied. High linearity and low distortion demands high value of VIP2, VIP3, IIP3, 1-dB compression point and low value of IMD3, Zero crossover point, higher order transconductance parameter. Through our simulations we have found that presence of interface trap charges leads to curtailment in reliability and life time of device.

AB - This paper presents an extensive survey on impact of interface trap charges on JLTFET. Objective of our work is to analyze degradation in performance of our device due to presence of interface trap charge present between Si-SiO2 interface. Effect of interface trap charges on drain current, transconductance, higher order transconductance, linearity and distortion parameter (VIP2, VIP3, IIP3, IMD3, Zero crossover point, 1-dB compression point) has been studied. High linearity and low distortion demands high value of VIP2, VIP3, IIP3, 1-dB compression point and low value of IMD3, Zero crossover point, higher order transconductance parameter. Through our simulations we have found that presence of interface trap charges leads to curtailment in reliability and life time of device.

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U2 - 10.1016/j.spmi.2017.06.036

DO - 10.1016/j.spmi.2017.06.036

M3 - Review article

AN - SCOPUS:85021089676

SN - 0749-6036

VL - 111

SP - 293

EP - 301

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

ER -

Effect of ITC's on linearity and distortion performance of Junctionless tunnel field effect transistor

Abstract

All Science Journal Classification (ASJC) codes

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