Abstract
Silicon carbonitride (SiCN) thin films were deposited on p-Si (100) substrates with different N 2 flow rates using SiC and Si 3N 4 powder precursors by chemical vapour deposition. To investigate the structural, vibrational and mechanical properties, the SiCN thin films were characterized by atomic force microscopy, Raman spectroscopy, X-ray diffraction (XRD), Fourier transform infrared and nanoindentation techniques. The XRD results reveal nanocrystals embedded with amorphous networks in the SiCN thin films. An increase in the ID/ IG ratio with an increase in the N 2 flow rate indicated the increase of sp 3 bonds in the SiCN thin film. The hardness (H), Young’s modulus (E), plasticity index (H / E) and (H3/ E2) increase with an increase in the N 2 flow rate.
| Original language | English |
|---|---|
| Article number | 251 |
| Journal | Bulletin of Materials Science |
| Volume | 42 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 01-10-2019 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Mechanics of Materials
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