TY - GEN
T1 - Effect of parameter variation in UTBB FDSOINCFET
AU - Kondekar, P. N.
AU - Awadhiya, Bhaskar
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/8/1
Y1 - 2017/8/1
N2 - In this work we have investigated the performance of UTBB FDSOI-NCFET with different dielectric and gate materials. Variation in ION/IOFF and subthreshold swing with these parameters has also been studied. Effect of varying ferroelectric properties such as coercive field and remanent polarization has been demonstrated. The basic idea here is to find out an optimum configuration for dielectric and gate materials which should be used so as to get better performance of the device. We have validated our simulation using TCAD simulator. Here, we have taken PZT (Lead zirconium titnate) as a ferroelectric material because it possesses many advantages like high dielectric constant and nano-second polarization reversal. This device is a unique amalgamation of Negative capacitance transistor and FDSOI. Negative capacitance provides low subthreshold swing and FDSOI ensures suppression of short channel effects and hence UTBB FDSOI-NCFET is a viable candidate for future low power transistors.
AB - In this work we have investigated the performance of UTBB FDSOI-NCFET with different dielectric and gate materials. Variation in ION/IOFF and subthreshold swing with these parameters has also been studied. Effect of varying ferroelectric properties such as coercive field and remanent polarization has been demonstrated. The basic idea here is to find out an optimum configuration for dielectric and gate materials which should be used so as to get better performance of the device. We have validated our simulation using TCAD simulator. Here, we have taken PZT (Lead zirconium titnate) as a ferroelectric material because it possesses many advantages like high dielectric constant and nano-second polarization reversal. This device is a unique amalgamation of Negative capacitance transistor and FDSOI. Negative capacitance provides low subthreshold swing and FDSOI ensures suppression of short channel effects and hence UTBB FDSOI-NCFET is a viable candidate for future low power transistors.
UR - https://www.scopus.com/pages/publications/85028534720
UR - https://www.scopus.com/pages/publications/85028534720#tab=citedBy
U2 - 10.1109/ISAF.2017.8000208
DO - 10.1109/ISAF.2017.8000208
M3 - Conference contribution
AN - SCOPUS:85028534720
T3 - 2017 Joint IEEE International Symposium on Applications of Ferroelectrics, International Workshop on Acoustic Transduction Materials and Devices and Piezoresponse Force Microscopy Workshop, ISAF-IWATMD-PFM 2017 - Conference
SP - 45
EP - 47
BT - 2017 Joint IEEE International Symposium on Applications of Ferroelectrics, International Workshop on Acoustic Transduction Materials and Devices and Piezoresponse Force Microscopy Workshop, ISAF-IWATMD-PFM 2017 - Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - Joint IEEE International Symposium on Applications of Ferroelectrics, International Workshop on Acoustic Transduction Materials and Devices and Piezoresponse Force Microscopy Workshop, ISAF-IWATMD-PFM 2017
Y2 - 7 May 2017 through 11 May 2017
ER -