Effective treatment on AlGaN/GaN MSM-2DEG varactor with (NH 4)2S/P2S5 Solution

Y. C. Ferng; L. B. Chang; A. Das; C. Y. Chen; C. C. Lin

doi:10.1149/1.3473728

Effective treatment on AlGaN/GaN MSM-2DEG varactor with (NH ₄)₂S/P₂S₅ Solution

Y. C. Ferng
, L. B. Chang
, A. Das
, C. Y. Chen
, C. C. Lin

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The effect of surface passivation using (NH₄)₂ S and (NH₄)₂ S/ P₂S₅ on a AlGaN/GaN-based metal-semiconductor-metal diode above a two-dimensional electron gas (MSM-2DEG) varactor was investigated. The surface property, capacitance ratio (Cmax / Cmin), and leakage current of the prepared samples were studied before and after treatments using X-ray photoelectron spectroscopy and capacitance-voltage and current-voltage analyses. It showed that the (NH₄)₂ S/ P₂S₅ -treated sample had the most excellent surface state and Cmax / Cmin and the least leakage current because of either reduced native oxide or deposited phosphorus compounds only provided by (NH₄) ₂ S/ P₂S₅ and sulfide upon the surface, also validated by having the highest sheet carrier density. Hence, these promising results promote further potential for varactor applications.

Original language	English
Pages (from-to)	H350-H353
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	10
DOIs	https://doi.org/10.1149/1.3473728
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.3473728

Cite this

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title = "Effective treatment on AlGaN/GaN MSM-2DEG varactor with (NH 4)2S/P2S5 Solution",

abstract = "The effect of surface passivation using (NH4)2 S and (NH4)2 S/ P2S5 on a AlGaN/GaN-based metal-semiconductor-metal diode above a two-dimensional electron gas (MSM-2DEG) varactor was investigated. The surface property, capacitance ratio (Cmax / Cmin), and leakage current of the prepared samples were studied before and after treatments using X-ray photoelectron spectroscopy and capacitance-voltage and current-voltage analyses. It showed that the (NH4)2 S/ P2S5 -treated sample had the most excellent surface state and Cmax / Cmin and the least leakage current because of either reduced native oxide or deposited phosphorus compounds only provided by (NH4) 2 S/ P2S5 and sulfide upon the surface, also validated by having the highest sheet carrier density. Hence, these promising results promote further potential for varactor applications.",

author = "Ferng, \{Y. C.\} and Chang, \{L. B.\} and A. Das and Chen, \{C. Y.\} and Lin, \{C. C.\}",

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T1 - Effective treatment on AlGaN/GaN MSM-2DEG varactor with (NH 4)2S/P2S5 Solution

AU - Ferng, Y. C.

AU - Chang, L. B.

AU - Das, A.

AU - Chen, C. Y.

AU - Lin, C. C.

PY - 2010

Y1 - 2010

N2 - The effect of surface passivation using (NH4)2 S and (NH4)2 S/ P2S5 on a AlGaN/GaN-based metal-semiconductor-metal diode above a two-dimensional electron gas (MSM-2DEG) varactor was investigated. The surface property, capacitance ratio (Cmax / Cmin), and leakage current of the prepared samples were studied before and after treatments using X-ray photoelectron spectroscopy and capacitance-voltage and current-voltage analyses. It showed that the (NH4)2 S/ P2S5 -treated sample had the most excellent surface state and Cmax / Cmin and the least leakage current because of either reduced native oxide or deposited phosphorus compounds only provided by (NH4) 2 S/ P2S5 and sulfide upon the surface, also validated by having the highest sheet carrier density. Hence, these promising results promote further potential for varactor applications.

AB - The effect of surface passivation using (NH4)2 S and (NH4)2 S/ P2S5 on a AlGaN/GaN-based metal-semiconductor-metal diode above a two-dimensional electron gas (MSM-2DEG) varactor was investigated. The surface property, capacitance ratio (Cmax / Cmin), and leakage current of the prepared samples were studied before and after treatments using X-ray photoelectron spectroscopy and capacitance-voltage and current-voltage analyses. It showed that the (NH4)2 S/ P2S5 -treated sample had the most excellent surface state and Cmax / Cmin and the least leakage current because of either reduced native oxide or deposited phosphorus compounds only provided by (NH4) 2 S/ P2S5 and sulfide upon the surface, also validated by having the highest sheet carrier density. Hence, these promising results promote further potential for varactor applications.

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DO - 10.1149/1.3473728

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SN - 1099-0062

VL - 13

SP - H350-H353

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 10

ER -

Effective treatment on AlGaN/GaN MSM-2DEG varactor with (NH ₄)₂S/P₂S₅ Solution

Abstract

All Science Journal Classification (ASJC) codes

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