Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

D. H.K. Murthy; T. Xu; W. H. Chen; A. J. Houtepen; T. J. Savenije; L. D.A. Siebbeles; J. P. Nys; C. Krzeminski; B. Grandidier; D. Stiévenard; P. Pareige; F. Jomard; G. Patriarche; O. I. Lebedev

doi:10.1088/0957-4484/22/31/315710

Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

D. H.K. Murthy^*
, T. Xu
, W. H. Chen
, A. J. Houtepen
, T. J. Savenije
, L. D.A. Siebbeles
, J. P. Nys
, C. Krzeminski
, B. Grandidier
, D. Stiévenard
, P. Pareige
, F. Jomard
, G. Patriarche
, O. I. Lebedev

^*Corresponding author for this work

Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

by performing electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and the decay kinetics on photoexcitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. Large enhancements in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities during the growth. They are explained by the internal electric field that builds up, due to higher doped sidewalls, as revealed by detailed analysis of the nanowire morphology and chemical composition.

Original language	English
Article number	315710
Journal	Nanotechnology
Volume	22
Issue number	31
DOIs	https://doi.org/10.1088/0957-4484/22/31/315710
Publication status	Published - 05-08-2011

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1088/0957-4484/22/31/315710

Cite this

Murthy, D. H. K., Xu, T., Chen, W. H., Houtepen, A. J., Savenije, T. J., Siebbeles, L. D. A., Nys, J. P., Krzeminski, C., Grandidier, B., Stiévenard, D., Pareige, P., Jomard, F., Patriarche, G., & Lebedev, O. I. (2011). Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient. Nanotechnology, 22(31), Article 315710. https://doi.org/10.1088/0957-4484/22/31/315710

@article{d31f523e6b38408b8af32f2fec4b3799,

title = "Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient",

abstract = "by performing electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and the decay kinetics on photoexcitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. Large enhancements in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities during the growth. They are explained by the internal electric field that builds up, due to higher doped sidewalls, as revealed by detailed analysis of the nanowire morphology and chemical composition.",

author = "Murthy, \{D. H.K.\} and T. Xu and Chen, \{W. H.\} and Houtepen, \{A. J.\} and Savenije, \{T. J.\} and Siebbeles, \{L. D.A.\} and Nys, \{J. P.\} and C. Krzeminski and B. Grandidier and D. Sti{\'e}venard and P. Pareige and F. Jomard and G. Patriarche and Lebedev, \{O. I.\}",

year = "2011",

month = aug,

day = "5",

doi = "10.1088/0957-4484/22/31/315710",

language = "English",

volume = "22",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "31",

}

Murthy, DHK, Xu, T, Chen, WH, Houtepen, AJ, Savenije, TJ, Siebbeles, LDA, Nys, JP, Krzeminski, C, Grandidier, B, Stiévenard, D, Pareige, P, Jomard, F, Patriarche, G & Lebedev, OI 2011, 'Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient', Nanotechnology, vol. 22, no. 31, 315710. https://doi.org/10.1088/0957-4484/22/31/315710

TY - JOUR

T1 - Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

AU - Murthy, D. H.K.

AU - Xu, T.

AU - Chen, W. H.

AU - Houtepen, A. J.

AU - Savenije, T. J.

AU - Siebbeles, L. D.A.

AU - Nys, J. P.

AU - Krzeminski, C.

AU - Grandidier, B.

AU - Stiévenard, D.

AU - Pareige, P.

AU - Jomard, F.

AU - Patriarche, G.

AU - Lebedev, O. I.

PY - 2011/8/5

Y1 - 2011/8/5

N2 - by performing electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and the decay kinetics on photoexcitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. Large enhancements in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities during the growth. They are explained by the internal electric field that builds up, due to higher doped sidewalls, as revealed by detailed analysis of the nanowire morphology and chemical composition.

AB - by performing electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and the decay kinetics on photoexcitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. Large enhancements in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities during the growth. They are explained by the internal electric field that builds up, due to higher doped sidewalls, as revealed by detailed analysis of the nanowire morphology and chemical composition.

UR - https://www.scopus.com/pages/publications/79960804402

UR - https://www.scopus.com/pages/publications/79960804402#tab=citedBy

U2 - 10.1088/0957-4484/22/31/315710

DO - 10.1088/0957-4484/22/31/315710

M3 - Article

AN - SCOPUS:79960804402

SN - 0957-4484

VL - 22

JO - Nanotechnology

JF - Nanotechnology

IS - 31

M1 - 315710

ER -

Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this