Electrical measurement of undercut in surface micromachined structures

Somashekara Bhat; Enakshi Bhattacharya

doi:10.1109/IWPSD.2007.4472617

Electrical measurement of undercut in surface micromachined structures

Somashekara Bhat^*
, Enakshi Bhattacharya

^*Corresponding author for this work

Manipal Institute of Technology, Manipal

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In a surface micromachined cantilever, the gap (g), beam thickness (t) and width gets modified during fabrication. Since performance of sensors and actuators strongly depend on the final geometry, it becomes essential that these parameters are measured. Two sets of oxide anchored cantilever beams of different lengths with 20 and 30μm widths are realised. On the released beams resonance frequency (f_i) measurements are performed. For a given length, by finding the ratio between measured frequencies for two widths, we get the value of undercut. Using this value in the slope of a f_i ² versus L^-4plot we get the Young's modulus (E) of beam material.

Original language	English
Title of host publication	Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Pages	702-705
Number of pages	4
DOIs	https://doi.org/10.1109/IWPSD.2007.4472617
Publication status	Published - 2007
Event	14th International Workshop on the Physics of Semiconductor Devices, IWPSD - Mumbai, India Duration: 16-12-2007 → 20-12-2007

Publication series

Name	Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

Conference

Conference	14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Country/Territory	India
City	Mumbai
Period	16-12-07 → 20-12-07

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/IWPSD.2007.4472617

Cite this

Bhat, S., & Bhattacharya, E. (2007). Electrical measurement of undercut in surface micromachined structures. In Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD (pp. 702-705). Article 4472617 (Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD). https://doi.org/10.1109/IWPSD.2007.4472617

@inproceedings{fea06e5f95be49f5a4fc0dd00fb1ac73,

title = "Electrical measurement of undercut in surface micromachined structures",

abstract = "In a surface micromachined cantilever, the gap (g), beam thickness (t) and width gets modified during fabrication. Since performance of sensors and actuators strongly depend on the final geometry, it becomes essential that these parameters are measured. Two sets of oxide anchored cantilever beams of different lengths with 20 and 30μm widths are realised. On the released beams resonance frequency (fi) measurements are performed. For a given length, by finding the ratio between measured frequencies for two widths, we get the value of undercut. Using this value in the slope of a fi 2 versus L-4plot we get the Young's modulus (E) of beam material.",

author = "Somashekara Bhat and Enakshi Bhattacharya",

year = "2007",

doi = "10.1109/IWPSD.2007.4472617",

language = "English",

isbn = "9781424417285",

series = "Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD",

pages = "702--705",

booktitle = "Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD",

note = "14th International Workshop on the Physics of Semiconductor Devices, IWPSD ; Conference date: 16-12-2007 Through 20-12-2007",

}

Bhat, S & Bhattacharya, E 2007, Electrical measurement of undercut in surface micromachined structures. in Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD., 4472617, Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD, pp. 702-705, 14th International Workshop on the Physics of Semiconductor Devices, IWPSD, Mumbai, India, 16-12-07. https://doi.org/10.1109/IWPSD.2007.4472617

Electrical measurement of undercut in surface micromachined structures. / Bhat, Somashekara; Bhattacharya, Enakshi.
Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD. 2007. p. 702-705 4472617 (Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Bhattacharya, Enakshi

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N2 - In a surface micromachined cantilever, the gap (g), beam thickness (t) and width gets modified during fabrication. Since performance of sensors and actuators strongly depend on the final geometry, it becomes essential that these parameters are measured. Two sets of oxide anchored cantilever beams of different lengths with 20 and 30μm widths are realised. On the released beams resonance frequency (fi) measurements are performed. For a given length, by finding the ratio between measured frequencies for two widths, we get the value of undercut. Using this value in the slope of a fi 2 versus L-4plot we get the Young's modulus (E) of beam material.

AB - In a surface micromachined cantilever, the gap (g), beam thickness (t) and width gets modified during fabrication. Since performance of sensors and actuators strongly depend on the final geometry, it becomes essential that these parameters are measured. Two sets of oxide anchored cantilever beams of different lengths with 20 and 30μm widths are realised. On the released beams resonance frequency (fi) measurements are performed. For a given length, by finding the ratio between measured frequencies for two widths, we get the value of undercut. Using this value in the slope of a fi 2 versus L-4plot we get the Young's modulus (E) of beam material.

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BT - Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

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ER -

Electrical measurement of undercut in surface micromachined structures

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