Electrical switching studies on amorphous Ge-Te-Sn thin films

Chandasree Das; M. G. Mahesha; G. Mohan Rao; S. Asokan

doi:10.1063/1.3606017

Electrical switching studies on amorphous Ge-Te-Sn thin films

Chandasree Das, M. G. Mahesha, G. Mohan Rao, S. Asokan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

Electrical switching studies on amorphous Ge₁₇Te _83-xSn_x thin films (1≤x≤4) has been done to find their suitability for Phase Change Memory application; Bulk ingots in glassy form are prepared using conventional melt quenching technique and the thin films are coated using flash evaporation technique. Samples are found to exhibit memory type of electrical switching behavior. The switching voltages of Ge ₁₇Te_83-xSn_x thin films have been found to decrease with increase in Sn concentration. The comparatively lower switching voltages of Ge₁₇Te_83-xSn_x samples, make them suitable candidates for phase change memory applications.

Original language	English
Title of host publication	Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010
Pages	633-634
Number of pages	2
Volume	1349
Edition	PART A
DOIs	https://doi.org/10.1063/1.3606017
Publication status	Published - 12-09-2011
Event	55th DAE Solid State Physics Symposium 2010 - Manipal, India Duration: 26-12-2010 → 30-12-2010

Conference

Conference	55th DAE Solid State Physics Symposium 2010
Country/Territory	India
City	Manipal
Period	26-12-10 → 30-12-10

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.3606017

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title = "Electrical switching studies on amorphous Ge-Te-Sn thin films",

abstract = "Electrical switching studies on amorphous Ge17Te 83-xSnx thin films (1≤x≤4) has been done to find their suitability for Phase Change Memory application; Bulk ingots in glassy form are prepared using conventional melt quenching technique and the thin films are coated using flash evaporation technique. Samples are found to exhibit memory type of electrical switching behavior. The switching voltages of Ge 17Te83-xSnx thin films have been found to decrease with increase in Sn concentration. The comparatively lower switching voltages of Ge17Te83-xSnx samples, make them suitable candidates for phase change memory applications.",

author = "Chandasree Das and Mahesha, {M. G.} and Rao, {G. Mohan} and S. Asokan",

year = "2011",

month = sep,

day = "12",

doi = "10.1063/1.3606017",

language = "English",

isbn = "9780735409057",

volume = "1349",

pages = "633--634",

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note = "55th DAE Solid State Physics Symposium 2010 ; Conference date: 26-12-2010 Through 30-12-2010",

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T1 - Electrical switching studies on amorphous Ge-Te-Sn thin films

AU - Das, Chandasree

AU - Mahesha, M. G.

AU - Rao, G. Mohan

AU - Asokan, S.

PY - 2011/9/12

Y1 - 2011/9/12

N2 - Electrical switching studies on amorphous Ge17Te 83-xSnx thin films (1≤x≤4) has been done to find their suitability for Phase Change Memory application; Bulk ingots in glassy form are prepared using conventional melt quenching technique and the thin films are coated using flash evaporation technique. Samples are found to exhibit memory type of electrical switching behavior. The switching voltages of Ge 17Te83-xSnx thin films have been found to decrease with increase in Sn concentration. The comparatively lower switching voltages of Ge17Te83-xSnx samples, make them suitable candidates for phase change memory applications.

AB - Electrical switching studies on amorphous Ge17Te 83-xSnx thin films (1≤x≤4) has been done to find their suitability for Phase Change Memory application; Bulk ingots in glassy form are prepared using conventional melt quenching technique and the thin films are coated using flash evaporation technique. Samples are found to exhibit memory type of electrical switching behavior. The switching voltages of Ge 17Te83-xSnx thin films have been found to decrease with increase in Sn concentration. The comparatively lower switching voltages of Ge17Te83-xSnx samples, make them suitable candidates for phase change memory applications.

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U2 - 10.1063/1.3606017

DO - 10.1063/1.3606017

M3 - Conference contribution

AN - SCOPUS:80052492739

SN - 9780735409057

VL - 1349

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EP - 634

BT - Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010

T2 - 55th DAE Solid State Physics Symposium 2010

Y2 - 26 December 2010 through 30 December 2010

ER -

Electrical switching studies on amorphous Ge-Te-Sn thin films

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