Electrical switching studies on amorphous Ge-Te-Sn thin films

Chandasree Das; M. G. Mahesha; G. Mohan Rao; S. Asokan

doi:10.1063/1.3606017

Electrical switching studies on amorphous Ge-Te-Sn thin films

Chandasree Das^*, M. G. Mahesha, G. Mohan Rao, S. Asokan

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

Electrical switching studies on amorphous Ge₁₇Te _83-xSn_x thin films (1≤x≤4) has been done to find their suitability for Phase Change Memory application; Bulk ingots in glassy form are prepared using conventional melt quenching technique and the thin films are coated using flash evaporation technique. Samples are found to exhibit memory type of electrical switching behavior. The switching voltages of Ge ₁₇Te_83-xSn_x thin films have been found to decrease with increase in Sn concentration. The comparatively lower switching voltages of Ge₁₇Te_83-xSn_x samples, make them suitable candidates for phase change memory applications.

Original language	English
Title of host publication	Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010
Pages	633-634
Number of pages	2
Volume	1349
Edition	PART A
DOIs	https://doi.org/10.1063/1.3606017
Publication status	Published - 12-09-2011
Event	55th DAE Solid State Physics Symposium 2010 - Manipal, India Duration: 26-12-2010 → 30-12-2010

Publication series

Name	AIP Conference Proceedings
Number	PART A
Volume	1349
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	55th DAE Solid State Physics Symposium 2010
Country/Territory	India
City	Manipal
Period	26-12-10 → 30-12-10

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.3606017

Cite this

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title = "Electrical switching studies on amorphous Ge-Te-Sn thin films",

abstract = "Electrical switching studies on amorphous Ge17Te 83-xSnx thin films (1≤x≤4) has been done to find their suitability for Phase Change Memory application; Bulk ingots in glassy form are prepared using conventional melt quenching technique and the thin films are coated using flash evaporation technique. Samples are found to exhibit memory type of electrical switching behavior. The switching voltages of Ge 17Te83-xSnx thin films have been found to decrease with increase in Sn concentration. The comparatively lower switching voltages of Ge17Te83-xSnx samples, make them suitable candidates for phase change memory applications.",

author = "Chandasree Das and Mahesha, {M. G.} and Rao, {G. Mohan} and S. Asokan",

year = "2011",

month = sep,

day = "12",

doi = "10.1063/1.3606017",

language = "English",

isbn = "9780735409057",

volume = "1349",

series = "AIP Conference Proceedings",

number = "PART A",

pages = "633--634",

booktitle = "Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010",

edition = "PART A",

note = "55th DAE Solid State Physics Symposium 2010 ; Conference date: 26-12-2010 Through 30-12-2010",

}

Das, C, Mahesha, MG, Rao, GM & Asokan, S 2011, Electrical switching studies on amorphous Ge-Te-Sn thin films. in Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010. PART A edn, vol. 1349, AIP Conference Proceedings, no. PART A, vol. 1349, pp. 633-634, 55th DAE Solid State Physics Symposium 2010, Manipal, India, 26-12-10. https://doi.org/10.1063/1.3606017

Electrical switching studies on amorphous Ge-Te-Sn thin films. / Das, Chandasree; Mahesha, M. G.; Rao, G. Mohan et al.
Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010. Vol. 1349 PART A. ed. 2011. p. 633-634 (AIP Conference Proceedings; Vol. 1349, No. PART A).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Electrical switching studies on amorphous Ge-Te-Sn thin films

AU - Das, Chandasree

AU - Mahesha, M. G.

AU - Rao, G. Mohan

AU - Asokan, S.

PY - 2011/9/12

Y1 - 2011/9/12

N2 - Electrical switching studies on amorphous Ge17Te 83-xSnx thin films (1≤x≤4) has been done to find their suitability for Phase Change Memory application; Bulk ingots in glassy form are prepared using conventional melt quenching technique and the thin films are coated using flash evaporation technique. Samples are found to exhibit memory type of electrical switching behavior. The switching voltages of Ge 17Te83-xSnx thin films have been found to decrease with increase in Sn concentration. The comparatively lower switching voltages of Ge17Te83-xSnx samples, make them suitable candidates for phase change memory applications.

AB - Electrical switching studies on amorphous Ge17Te 83-xSnx thin films (1≤x≤4) has been done to find their suitability for Phase Change Memory application; Bulk ingots in glassy form are prepared using conventional melt quenching technique and the thin films are coated using flash evaporation technique. Samples are found to exhibit memory type of electrical switching behavior. The switching voltages of Ge 17Te83-xSnx thin films have been found to decrease with increase in Sn concentration. The comparatively lower switching voltages of Ge17Te83-xSnx samples, make them suitable candidates for phase change memory applications.

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BT - Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010

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Electrical switching studies on amorphous Ge-Te-Sn thin films

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