Electrophoresis of nanodiamond on the growth of ultrananocrystalline diamond films on silicon nanowires and the enhancement of the electron field emission properties

Electrophoresis deposition (EPD) of nanodiamond was found to be a very efficient process in forming the nucleation sites for the growth of ultrananocrystalline diamond (UNCD) films. Transmission electron microscopic investigations showed that the EPD-derived UNCD films grown on planar Si substrates contain uniform granular structure with sharp, smooth, and conductive UNCD-to-Si interface layer, which helps in better electron field emission (EFE) properties of the UNCD films. Moreover, contrary to ultrasonication process for nucleating the diamond, the EPD process is a gentle one that induced no damage to the silicon nanowire arrays (SiNWs), facilitating the formation of nuclei for growing UNCD films on SiNWs. Such a gentle process significantly enhanced the EFE properties of UNCD/SiNWs. The EPD-derived UNCD/SiNW emitters show superior EFE performances to the planar UNCD films, that is, a turn-on field of 7.19 V/μm and a large EFE current density of 2.21 mA/cm ² at 15.0 V/μm. Furthermore, a parallel plate plasma device fabricated using the EPD-derived UNCD/SiNW nanostructures as cathode shows a high Ar plasma current value of 3.5 mA/cm ² at a low applied field of 0.35 V/μm. These results demonstrate that these EPD-derived UNCD/SiNW nanostructures have great potential for the applications in flat panel displays due to their superior EFE properties and plasma illumination performances.