Ensuring Robustness: Reliability Analysis of 4H-SiC Trench MOSFETs in High-Performance Analog Applications

In this chapter, the reliability issues of interface trap charges (ITCs) on 4H-SiC (4H-silicon carbide) Trench metal-oxide-semiconductor field-effect transistor (4H-SiC-T-MOSFET) have been discussed in terms of analog parameters. Reliability issues in 4H-SiC-T-MOSFET related to trap charges primarily stem from the interface between the gate oxide and the silicon carbide semiconductor. Trap charges at this interface can lead to threshold voltage shifts, degradation of device performance, and long-term reliability issues. The density of interface traps at the SiC/SiO₂ interface is a critical parameter affecting device reliability. High trap densities can lead to increased interface state charges, which can adversely affect device performance and reliability. Trap charges at the interface can cause threshold voltage shifts, leading to variations in device characteristics and performance. Threshold voltage instability can affect circuit operation and reliability over time. Therefore, while trap charges at the SiC/SiO₂ interface can pose reliability challenges for 4H-SiC-T-MOSFET, ongoing research and development efforts focus on mitigating these issues through improved materials, processing techniques, and device design strategies. By addressing interface trap-related reliability concerns, 4H-SiC-T-MOSFET can achieve enhanced long-term reliability and performance for various high-power and high-temperature applications.