Erratum: Flexible fullerene field-effect transistors fabricated through solution processing (Advanced Materials (2009) 21 (4845) DOI:10.1002/adma.200901215)

Chao Feng Sung; Dhananjay Kekuda; Li Fen Chu; Yuh Zheng Lee; Fang Chung Chen; Meng Chyi Wu; Chih Wei Chu

doi:10.1002/adma.201090151

Erratum: Flexible fullerene field-effect transistors fabricated through solution processing (Advanced Materials (2009) 21 (4845) DOI:10.1002/adma.200901215)

Chao Feng Sung, Dhananjay Kekuda, Li Fen Chu, Yuh Zheng Lee, Fang Chung Chen, Meng Chyi Wu, Chih Wei Chu^*

^*Corresponding author for this work

Department of Physics, Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Pages (from-to)	5081
Number of pages	1
Journal	Advanced Materials
Volume	22
Issue number	45
DOIs	https://doi.org/10.1002/adma.201090151
Publication status	Published - 01-12-2010

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201090151

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AU - Chu, Li Fen

AU - Lee, Yuh Zheng

AU - Chen, Fang Chung

AU - Wu, Meng Chyi

AU - Chu, Chih Wei

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SN - 0935-9648

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Erratum: Flexible fullerene field-effect transistors fabricated through solution processing (Advanced Materials (2009) 21 (4845) DOI:10.1002/adma.200901215)

All Science Journal Classification (ASJC) codes

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