Erratum: Flexible fullerene field-effect transistors fabricated through solution processing (Advanced Materials (2009) 21 (4845) DOI:10.1002/adma.200901215)

Chao Feng Sung; Dhananjay Kekuda; Li Fen Chu; Yuh Zheng Lee; Fang Chung Chen; Meng Chyi Wu; Chih Wei Chu

doi:10.1002/adma.201090151

Erratum: Flexible fullerene field-effect transistors fabricated through solution processing (Advanced Materials (2009) 21 (4845) DOI:10.1002/adma.200901215)

Chao Feng Sung
, Dhananjay Kekuda
, Li Fen Chu
, Yuh Zheng Lee
, Fang Chung Chen
, Meng Chyi Wu
, Chih Wei Chu^*

^*Corresponding author for this work

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Pages (from-to)	5081
Number of pages	1
Journal	Advanced Materials
Volume	22
Issue number	45
DOIs	https://doi.org/10.1002/adma.201090151
Publication status	Published - 01-12-2010

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201090151

Cite this

@article{416a9b76f5c54c5e96c0f14f167132cc,

title = "Erratum: Flexible fullerene field-effect transistors fabricated through solution processing (Advanced Materials (2009) 21 (4845) DOI:10.1002/adma.200901215)",

author = "Sung, \{Chao Feng\} and Dhananjay Kekuda and Chu, \{Li Fen\} and Lee, \{Yuh Zheng\} and Chen, \{Fang Chung\} and Wu, \{Meng Chyi\} and Chu, \{Chih Wei\}",

year = "2010",

month = dec,

day = "1",

doi = "10.1002/adma.201090151",

language = "English",

volume = "22",

pages = "5081",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "45",

}

TY - JOUR

T1 - Erratum

T2 - Flexible fullerene field-effect transistors fabricated through solution processing (Advanced Materials (2009) 21 (4845) DOI:10.1002/adma.200901215)

AU - Sung, Chao Feng

AU - Kekuda, Dhananjay

AU - Chu, Li Fen

AU - Lee, Yuh Zheng

AU - Chen, Fang Chung

AU - Wu, Meng Chyi

AU - Chu, Chih Wei

PY - 2010/12/1

Y1 - 2010/12/1

UR - https://www.scopus.com/pages/publications/78649833519

UR - https://www.scopus.com/pages/publications/78649833519#tab=citedBy

U2 - 10.1002/adma.201090151

DO - 10.1002/adma.201090151

M3 - Comment/debate

AN - SCOPUS:78649833519

SN - 0935-9648

VL - 22

SP - 5081

JO - Advanced Materials

JF - Advanced Materials

IS - 45

ER -

Erratum: Flexible fullerene field-effect transistors fabricated through solution processing (Advanced Materials (2009) 21 (4845) DOI:10.1002/adma.200901215)

All Science Journal Classification (ASJC) codes

Access to Document

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