Abstract
In this work, SiCN thin films were deposited on p-Si (100) substrate using a thermal Chemical Vapor Deposition (CVD) process. The mechanical behavior of the thin film was characterized using the nanoindentation technique, where the load was varied from 1 to 4 mN, to understand the influence of load variation on the load-displacement response. Additionally, an experimentally validated FE model, incorporating an elast-plastic material response of the thin film, was developed to understand localized stress distribution and fracture behavior. The fracture behavior is examined through two modes: (a) cracking and interfacial delamination during the nano-indentation test and (b) the peel test. The FE model revealed that in the case of the weak cohesive interface between SiCN and Si, the interfacial failure initiates at a critical displacement of 110 nm. During the peel test, it was observed that the critical fracture energy of the interface plays a significant role in the interface debonding. These finding highlights the strong dependence of the mechanical integrity of the SiCN thin film on the applied load.
| Original language | English |
|---|---|
| Article number | 31759 |
| Journal | Scientific Reports |
| Volume | 15 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 12-2025 |
All Science Journal Classification (ASJC) codes
- General
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