Fabrication and characterization of ZnO/AI/ZnO multilayers by simultaneous DC and RF magnetron sputtering

K. K. Nagaraja; A. Santhosh Kumar; H. S. Nagaraja

doi:10.1088/1757-899X/73/1/012071

Fabrication and characterization of ZnO/AI/ZnO multilayers by simultaneous DC and RF magnetron sputtering

K. K. Nagaraja, A. Santhosh Kumar, H. S. Nagaraja

Department of Physics, Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

The present investigation reports the fabrication and characterization of multilayered transparent electrodes by simultaneous DC and RF magnetron sputtering on glass substrates. The multilayer structure consists of three layers (ZnO/Al/ZnO). The influence of Al layer thickness on the electrical and optical properties was investigated. Optimum thickness of Al was determined for high transmittance and good electrical conductivity. High quality films having resistance as low as 25 Ω/sq with optical transmittance upto 65% were obtained at room temperature.

Original language	English
Article number	012071
Journal	IOP Conference Series: Materials Science and Engineering
Volume	73
Issue number	1
DOIs	https://doi.org/10.1088/1757-899X/73/1/012071
Publication status	Published - 01-01-2015
Event	International Conference on Materials Science and Technology, ICMST 2012 - Kerala, India Duration: 10-06-2012 → 14-06-2012

All Science Journal Classification (ASJC) codes

Materials Science(all)
Engineering(all)

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10.1088/1757-899X/73/1/012071

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title = "Fabrication and characterization of ZnO/AI/ZnO multilayers by simultaneous DC and RF magnetron sputtering",

abstract = "The present investigation reports the fabrication and characterization of multilayered transparent electrodes by simultaneous DC and RF magnetron sputtering on glass substrates. The multilayer structure consists of three layers (ZnO/Al/ZnO). The influence of Al layer thickness on the electrical and optical properties was investigated. Optimum thickness of Al was determined for high transmittance and good electrical conductivity. High quality films having resistance as low as 25 Ω/sq with optical transmittance upto 65% were obtained at room temperature.",

author = "Nagaraja, {K. K.} and Kumar, {A. Santhosh} and Nagaraja, {H. S.}",

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AU - Nagaraja, K. K.

AU - Kumar, A. Santhosh

AU - Nagaraja, H. S.

PY - 2015/1/1

Y1 - 2015/1/1

N2 - The present investigation reports the fabrication and characterization of multilayered transparent electrodes by simultaneous DC and RF magnetron sputtering on glass substrates. The multilayer structure consists of three layers (ZnO/Al/ZnO). The influence of Al layer thickness on the electrical and optical properties was investigated. Optimum thickness of Al was determined for high transmittance and good electrical conductivity. High quality films having resistance as low as 25 Ω/sq with optical transmittance upto 65% were obtained at room temperature.

AB - The present investigation reports the fabrication and characterization of multilayered transparent electrodes by simultaneous DC and RF magnetron sputtering on glass substrates. The multilayer structure consists of three layers (ZnO/Al/ZnO). The influence of Al layer thickness on the electrical and optical properties was investigated. Optimum thickness of Al was determined for high transmittance and good electrical conductivity. High quality films having resistance as low as 25 Ω/sq with optical transmittance upto 65% were obtained at room temperature.

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DO - 10.1088/1757-899X/73/1/012071

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AN - SCOPUS:84923253721

SN - 1757-8981

VL - 73

JO - IOP Conference Series: Materials Science and Engineering

JF - IOP Conference Series: Materials Science and Engineering

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T2 - International Conference on Materials Science and Technology, ICMST 2012

Y2 - 10 June 2012 through 14 June 2012

ER -

Fabrication and characterization of ZnO/AI/ZnO multilayers by simultaneous DC and RF magnetron sputtering

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