Fabrication and electrical characterization of vacuum deposited n-CdTe/p-ZnTe heterojunction diodes

Kasturi V. Bangera*, Gowrish K. Rao, G. K. Shivakumar

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The study of n-CdTe/p-ZnTe heterojunctions is of vital importance for the fabrication of single junction and tandem solar cells. In the present research work n-CdTe/p-ZnTe heterojunction diodes were prepared by high vacuum deposition technique. The growth conditions required for obtaining desired quality n-CdTe and p-ZnTe films were optimized by performing a series of trials. The n-CdTe/p-ZnTe heterojunctions were prepared by first depositing CdTe film on glass substrate and then depositing ZnTe flim on top of CdTe. Detailed electrical characterization of the heterojunction was performed. The conduction in the heterojunction was predominantly due to thermionic emission at low voltages. However at higher voltages space charge limited conduction was found to be dominant. The barrier height of the heterojunction was deduced by studying the I-V characteristics.

Original languageEnglish
Title of host publicationEnabling Science and Nanotechnology - 2010 International Conference on Enabling Science and Nanotechnology, EsciNano2010
Pages328-331
Number of pages4
Volume1341
DOIs
Publication statusPublished - 11-11-2011
Event2010 International Conference on Enabling Science and Nanotechnology, EsciNano2010 - Kuala Lumpur, Malaysia
Duration: 01-12-201003-12-2010

Publication series

NameAIP Conference Proceedings
Volume1341
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference2010 International Conference on Enabling Science and Nanotechnology, EsciNano2010
Country/TerritoryMalaysia
CityKuala Lumpur
Period01-12-1003-12-10

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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