TY - JOUR
T1 - Fabrication of n-ZnS/p-SnS, n-ZnO/p-SnS, and n-SnO2/p-SnS heterojunctions by 2-step SILAR process for photodetector applications
AU - Kumar, Pawan
AU - Moger, Sahana Nagappa
AU - Rao, Gowrish K.
AU - Mahesha, M. G.
N1 - Funding Information:
The authors are thankful to Manipal Institute of Technology (MAHE, Manipal) for providing financial assistance under Dr. TMA Pai fellowship and central instrumentation facility, MIT, MAHE, Manipal for providing characterization facilities.
Publisher Copyright:
© 2023 Elsevier Ltd
PY - 2024/1
Y1 - 2024/1
N2 - In this work, we present the fabrication and detailed analysis of three functional heterojunctions based on SnS. Unlike most of the previous reports, all semiconductor layers in the heterojunctions were deposited using the low-cost SILAR technique. The ZnS, ZnO, and SnO2 films, each with a thickness of 400 nm, were grown on a previously deposited 800 nm SnS layer, forming n-ZnS/p-SnS, n-ZnO/p-SnS, and n-SnO2/p-SnS heterojunctions. Current-voltage characteristics confirmed the successful formation of p-n junctions. Various models were used to estimate junction parameters such as diode ideality factor, barrier height, and series resistance. The fabricated diodes exhibited a prominent photo response under illumination. Photodetection figures of merit were estimated for all the devices. n-ZnS/p-SnS showed 0.003μA response current, with 0.27 sensitivity. The responsivity observed was around 0.6 μA /W with LDR of 2.09 dB. The specific detectivity was 106 Jones. Similarly, n-ZnO/p-SnS showed 0.021μA response current, with 0.38 sensitivity. The responsivity observed was around 4.2 μA /W with LDR of 2.80 dB. The specific detectivity was 106 Jones. However, n-SnO2/p-SnS showed remarkable figures of merit such as 2.4 μA response current, with 8.40 sensitivity. The responsivity observed was around 488 μA/W with LDR of 19.47 dB. The specific detectivity was 109 Jones. The rise and decay time of the photocurrent were 5 and 7 s, respectively.
AB - In this work, we present the fabrication and detailed analysis of three functional heterojunctions based on SnS. Unlike most of the previous reports, all semiconductor layers in the heterojunctions were deposited using the low-cost SILAR technique. The ZnS, ZnO, and SnO2 films, each with a thickness of 400 nm, were grown on a previously deposited 800 nm SnS layer, forming n-ZnS/p-SnS, n-ZnO/p-SnS, and n-SnO2/p-SnS heterojunctions. Current-voltage characteristics confirmed the successful formation of p-n junctions. Various models were used to estimate junction parameters such as diode ideality factor, barrier height, and series resistance. The fabricated diodes exhibited a prominent photo response under illumination. Photodetection figures of merit were estimated for all the devices. n-ZnS/p-SnS showed 0.003μA response current, with 0.27 sensitivity. The responsivity observed was around 0.6 μA /W with LDR of 2.09 dB. The specific detectivity was 106 Jones. Similarly, n-ZnO/p-SnS showed 0.021μA response current, with 0.38 sensitivity. The responsivity observed was around 4.2 μA /W with LDR of 2.80 dB. The specific detectivity was 106 Jones. However, n-SnO2/p-SnS showed remarkable figures of merit such as 2.4 μA response current, with 8.40 sensitivity. The responsivity observed was around 488 μA/W with LDR of 19.47 dB. The specific detectivity was 109 Jones. The rise and decay time of the photocurrent were 5 and 7 s, respectively.
UR - http://www.scopus.com/inward/record.url?scp=85168806911&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85168806911&partnerID=8YFLogxK
U2 - 10.1016/j.optlastec.2023.109980
DO - 10.1016/j.optlastec.2023.109980
M3 - Article
AN - SCOPUS:85168806911
SN - 0030-3992
VL - 168
JO - Optics and Laser Technology
JF - Optics and Laser Technology
M1 - 109980
ER -