Fabrication of n-ZnS/p-SnS, n-ZnO/p-SnS, and n-SnO2/p-SnS heterojunctions by 2-step SILAR process for photodetector applications

Pawan Kumar, Sahana Nagappa Moger, Gowrish K. Rao, M. G. Mahesha

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

In this work, we present the fabrication and detailed analysis of three functional heterojunctions based on SnS. Unlike most of the previous reports, all semiconductor layers in the heterojunctions were deposited using the low-cost SILAR technique. The ZnS, ZnO, and SnO2 films, each with a thickness of 400 nm, were grown on a previously deposited 800 nm SnS layer, forming n-ZnS/p-SnS, n-ZnO/p-SnS, and n-SnO2/p-SnS heterojunctions. Current-voltage characteristics confirmed the successful formation of p-n junctions. Various models were used to estimate junction parameters such as diode ideality factor, barrier height, and series resistance. The fabricated diodes exhibited a prominent photo response under illumination. Photodetection figures of merit were estimated for all the devices. n-ZnS/p-SnS showed 0.003μA response current, with 0.27 sensitivity. The responsivity observed was around 0.6 μA /W with LDR of 2.09 dB. The specific detectivity was 106 Jones. Similarly, n-ZnO/p-SnS showed 0.021μA response current, with 0.38 sensitivity. The responsivity observed was around 4.2 μA /W with LDR of 2.80 dB. The specific detectivity was 106 Jones. However, n-SnO2/p-SnS showed remarkable figures of merit such as 2.4 μA response current, with 8.40 sensitivity. The responsivity observed was around 488 μA/W with LDR of 19.47 dB. The specific detectivity was 109 Jones. The rise and decay time of the photocurrent were 5 and 7 s, respectively.

Original languageEnglish
Article number109980
JournalOptics and Laser Technology
Volume168
DOIs
Publication statusPublished - 01-2024

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Fabrication of n-ZnS/p-SnS, n-ZnO/p-SnS, and n-SnO2/p-SnS heterojunctions by 2-step SILAR process for photodetector applications'. Together they form a unique fingerprint.

Cite this