Flexible fullerene field-Effect transistors fabricated through solution processing

Chao Feng Sung; Dhananjay Kekuda; Li Fen Chu; Yuh Zheng Lee; Fang Chung Chen; Meng Chyi Wu; Chih Wei Chu

doi:10.1002/adma.200901215

Flexible fullerene field-Effect transistors fabricated through solution processing

Chao Feng Sung^*
, Dhananjay Kekuda
, Li Fen Chu
, Yuh Zheng Lee
, Fang Chung Chen
, Meng Chyi Wu
, Chih Wei Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

C60-based thin-film transistors are fabricated through solution processing. On rigid indium tin oxide (ITO) glass, the transistors display electron mobilities as high as 0.21 cm² V^-1 s^-1 and a threshold voltage of 0.7V, only slightly lower than those of organic thin-film transistors prepared through vacuum deposition. On ITO-coated PET substrates, the mobilities in the flexible devices (see image) are approximately one order of magnitude lower than those of devices prepared on rigid glass substrates. (Figure Presented)

Original language	English
Pages (from-to)	4845-4849
Number of pages	5
Journal	Advanced Materials
Volume	21
Issue number	47
DOIs	https://doi.org/10.1002/adma.200901215
Publication status	Published - 18-12-2009

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.200901215

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title = "Flexible fullerene field-Effect transistors fabricated through solution processing",

abstract = "C60-based thin-film transistors are fabricated through solution processing. On rigid indium tin oxide (ITO) glass, the transistors display electron mobilities as high as 0.21 cm2 V-1 s-1 and a threshold voltage of 0.7V, only slightly lower than those of organic thin-film transistors prepared through vacuum deposition. On ITO-coated PET substrates, the mobilities in the flexible devices (see image) are approximately one order of magnitude lower than those of devices prepared on rigid glass substrates. (Figure Presented)",

author = "Sung, \{Chao Feng\} and Dhananjay Kekuda and Chu, \{Li Fen\} and Lee, \{Yuh Zheng\} and Chen, \{Fang Chung\} and Wu, \{Meng Chyi\} and Chu, \{Chih Wei\}",

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AU - Sung, Chao Feng

AU - Kekuda, Dhananjay

AU - Chu, Li Fen

AU - Lee, Yuh Zheng

AU - Chen, Fang Chung

AU - Wu, Meng Chyi

AU - Chu, Chih Wei

PY - 2009/12/18

Y1 - 2009/12/18

N2 - C60-based thin-film transistors are fabricated through solution processing. On rigid indium tin oxide (ITO) glass, the transistors display electron mobilities as high as 0.21 cm2 V-1 s-1 and a threshold voltage of 0.7V, only slightly lower than those of organic thin-film transistors prepared through vacuum deposition. On ITO-coated PET substrates, the mobilities in the flexible devices (see image) are approximately one order of magnitude lower than those of devices prepared on rigid glass substrates. (Figure Presented)

AB - C60-based thin-film transistors are fabricated through solution processing. On rigid indium tin oxide (ITO) glass, the transistors display electron mobilities as high as 0.21 cm2 V-1 s-1 and a threshold voltage of 0.7V, only slightly lower than those of organic thin-film transistors prepared through vacuum deposition. On ITO-coated PET substrates, the mobilities in the flexible devices (see image) are approximately one order of magnitude lower than those of devices prepared on rigid glass substrates. (Figure Presented)

UR - https://www.scopus.com/pages/publications/73949136568

UR - https://www.scopus.com/pages/publications/73949136568#tab=citedBy

U2 - 10.1002/adma.200901215

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VL - 21

SP - 4845

EP - 4849

JO - Advanced Materials

JF - Advanced Materials

IS - 47

ER -

Flexible fullerene field-Effect transistors fabricated through solution processing

Abstract

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