TY - JOUR
T1 - Flexible ultraviolet photosensors based on p-NiO/n-Zn(1−x) Sn(x)O heterojunction with an ZnO interfacial layer that works in self regime mode
AU - Bhat, Prashant
AU - Salunkhe, Parashurama
AU - Kekuda, Dhananjaya
N1 - Funding Information:
The authors are grateful to Manipal Academy of Higher Education for supporting this research through intramural funding (Grant number: MAHE/DREG/PhD/IMF/2019 ). A part of this research was performed by using facilities at CeNSE, Indian Institute of Science Bengaluru, funded by Ministry of Education (MoE), Ministry of Electronics and Information Technology (MeitY), and Nano mission, Department of Science and Technology ( DST ), Government of India.
Publisher Copyright:
© 2023 Elsevier B.V.
PY - 2023/5/1
Y1 - 2023/5/1
N2 - Visible transparent p−NiO/n−Zn1−xSnxOx=0.15(TZO) and p−NiO/i−ZnO/n−TZO heterojunctions were successfully fabricated on ITO coated flexible PET sheet by DC-magnetron sputtering method for UV detection. Electrical and photo-sensing properties were investigated in detail to study the effectiveness of the incorporated intrinsic layer (i-ZnO) between the heterostructure. Under UV (365 nm, 0.06 mW/cm2) illumination the engineered p-i-n diode structure exhibited photoresponsivity of 0.338 A/W, and external quantum efficiencies of 1.15%, even under no bias conditions. The fabricated photosensors demonstrated high detectivity 1.70 × 1011 Jones and 3.42 × 1012 Jones for p-n and p-i-n diodes respectively. The remarkable enhancement in the transient photocurrent response speed of p-i-n diode compared to that of p-n diodes was also observed. Therefore, these outcomes recommend that p−NiO/i−ZnO/n−TZO diodes might be useful for flexible, see-through, and self-powered photosensors for wearable smart sensor applications.
AB - Visible transparent p−NiO/n−Zn1−xSnxOx=0.15(TZO) and p−NiO/i−ZnO/n−TZO heterojunctions were successfully fabricated on ITO coated flexible PET sheet by DC-magnetron sputtering method for UV detection. Electrical and photo-sensing properties were investigated in detail to study the effectiveness of the incorporated intrinsic layer (i-ZnO) between the heterostructure. Under UV (365 nm, 0.06 mW/cm2) illumination the engineered p-i-n diode structure exhibited photoresponsivity of 0.338 A/W, and external quantum efficiencies of 1.15%, even under no bias conditions. The fabricated photosensors demonstrated high detectivity 1.70 × 1011 Jones and 3.42 × 1012 Jones for p-n and p-i-n diodes respectively. The remarkable enhancement in the transient photocurrent response speed of p-i-n diode compared to that of p-n diodes was also observed. Therefore, these outcomes recommend that p−NiO/i−ZnO/n−TZO diodes might be useful for flexible, see-through, and self-powered photosensors for wearable smart sensor applications.
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U2 - 10.1016/j.sna.2023.114279
DO - 10.1016/j.sna.2023.114279
M3 - Article
AN - SCOPUS:85152021189
SN - 0924-4247
VL - 354
JO - Sensors and Actuators A: Physical
JF - Sensors and Actuators A: Physical
M1 - 114279
ER -