Visible transparent p−NiO/n−Zn1−xSnxOx=0.15(TZO) and p−NiO/i−ZnO/n−TZO heterojunctions were successfully fabricated on ITO coated flexible PET sheet by DC-magnetron sputtering method for UV detection. Electrical and photo-sensing properties were investigated in detail to study the effectiveness of the incorporated intrinsic layer (i-ZnO) between the heterostructure. Under UV (365 nm, 0.06 mW/cm2) illumination the engineered p-i-n diode structure exhibited photoresponsivity of 0.338 A/W, and external quantum efficiencies of 1.15%, even under no bias conditions. The fabricated photosensors demonstrated high detectivity 1.70 × 1011 Jones and 3.42 × 1012 Jones for p-n and p-i-n diodes respectively. The remarkable enhancement in the transient photocurrent response speed of p-i-n diode compared to that of p-n diodes was also observed. Therefore, these outcomes recommend that p−NiO/i−ZnO/n−TZO diodes might be useful for flexible, see-through, and self-powered photosensors for wearable smart sensor applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering