Flexible ultraviolet photosensors based on p-NiO/n-Zn(1−x) Sn(x)O heterojunction with an ZnO interfacial layer that works in self regime mode

Prashant Bhat; Parashurama Salunkhe; Dhananjaya Kekuda

doi:10.1016/j.sna.2023.114279

Flexible ultraviolet photosensors based on p-NiO/n-Zn_(1−x) Sn_(x)O heterojunction with an ZnO interfacial layer that works in self regime mode

Prashant Bhat
, Parashurama Salunkhe
, Dhananjaya Kekuda^*

^*Corresponding author for this work

Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Visible transparent p−NiO/n−Zn_1−xSn_xOx=0.15(TZO) and p−NiO/i−ZnO/n−TZO heterojunctions were successfully fabricated on ITO coated flexible PET sheet by DC-magnetron sputtering method for UV detection. Electrical and photo-sensing properties were investigated in detail to study the effectiveness of the incorporated intrinsic layer (i-ZnO) between the heterostructure. Under UV (365 nm, 0.06 mW/cm²) illumination the engineered p-i-n diode structure exhibited photoresponsivity of 0.338 A/W, and external quantum efficiencies of 1.15%, even under no bias conditions. The fabricated photosensors demonstrated high detectivity 1.70 × 10¹¹ Jones and 3.42 × 10¹² Jones for p-n and p-i-n diodes respectively. The remarkable enhancement in the transient photocurrent response speed of p-i-n diode compared to that of p-n diodes was also observed. Therefore, these outcomes recommend that p−NiO/i−ZnO/n−TZO diodes might be useful for flexible, see-through, and self-powered photosensors for wearable smart sensor applications.

Original language	English
Article number	114279
Journal	Sensors and Actuators A: Physical
Volume	354
DOIs	https://doi.org/10.1016/j.sna.2023.114279
Publication status	Published - 01-05-2023

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

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10.1016/j.sna.2023.114279

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title = "Flexible ultraviolet photosensors based on p-NiO/n-Zn(1−x) Sn(x)O heterojunction with an ZnO interfacial layer that works in self regime mode",

abstract = "Visible transparent p−NiO/n−Zn1−xSnxOx=0.15(TZO) and p−NiO/i−ZnO/n−TZO heterojunctions were successfully fabricated on ITO coated flexible PET sheet by DC-magnetron sputtering method for UV detection. Electrical and photo-sensing properties were investigated in detail to study the effectiveness of the incorporated intrinsic layer (i-ZnO) between the heterostructure. Under UV (365 nm, 0.06 mW/cm2) illumination the engineered p-i-n diode structure exhibited photoresponsivity of 0.338 A/W, and external quantum efficiencies of 1.15\%, even under no bias conditions. The fabricated photosensors demonstrated high detectivity 1.70 × 1011 Jones and 3.42 × 1012 Jones for p-n and p-i-n diodes respectively. The remarkable enhancement in the transient photocurrent response speed of p-i-n diode compared to that of p-n diodes was also observed. Therefore, these outcomes recommend that p−NiO/i−ZnO/n−TZO diodes might be useful for flexible, see-through, and self-powered photosensors for wearable smart sensor applications.",

author = "Prashant Bhat and Parashurama Salunkhe and Dhananjaya Kekuda",

note = "Funding Information: The authors are grateful to Manipal Academy of Higher Education for supporting this research through intramural funding (Grant number: MAHE/DREG/PhD/IMF/2019 ). A part of this research was performed by using facilities at CeNSE, Indian Institute of Science Bengaluru, funded by Ministry of Education (MoE), Ministry of Electronics and Information Technology (MeitY), and Nano mission, Department of Science and Technology ( DST ), Government of India. Publisher Copyright: {\textcopyright} 2023 Elsevier B.V.",

year = "2023",

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doi = "10.1016/j.sna.2023.114279",

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AU - Bhat, Prashant

AU - Salunkhe, Parashurama

AU - Kekuda, Dhananjaya

N1 - Funding Information: The authors are grateful to Manipal Academy of Higher Education for supporting this research through intramural funding (Grant number: MAHE/DREG/PhD/IMF/2019 ). A part of this research was performed by using facilities at CeNSE, Indian Institute of Science Bengaluru, funded by Ministry of Education (MoE), Ministry of Electronics and Information Technology (MeitY), and Nano mission, Department of Science and Technology ( DST ), Government of India. Publisher Copyright: © 2023 Elsevier B.V.

PY - 2023/5/1

Y1 - 2023/5/1

N2 - Visible transparent p−NiO/n−Zn1−xSnxOx=0.15(TZO) and p−NiO/i−ZnO/n−TZO heterojunctions were successfully fabricated on ITO coated flexible PET sheet by DC-magnetron sputtering method for UV detection. Electrical and photo-sensing properties were investigated in detail to study the effectiveness of the incorporated intrinsic layer (i-ZnO) between the heterostructure. Under UV (365 nm, 0.06 mW/cm2) illumination the engineered p-i-n diode structure exhibited photoresponsivity of 0.338 A/W, and external quantum efficiencies of 1.15%, even under no bias conditions. The fabricated photosensors demonstrated high detectivity 1.70 × 1011 Jones and 3.42 × 1012 Jones for p-n and p-i-n diodes respectively. The remarkable enhancement in the transient photocurrent response speed of p-i-n diode compared to that of p-n diodes was also observed. Therefore, these outcomes recommend that p−NiO/i−ZnO/n−TZO diodes might be useful for flexible, see-through, and self-powered photosensors for wearable smart sensor applications.

AB - Visible transparent p−NiO/n−Zn1−xSnxOx=0.15(TZO) and p−NiO/i−ZnO/n−TZO heterojunctions were successfully fabricated on ITO coated flexible PET sheet by DC-magnetron sputtering method for UV detection. Electrical and photo-sensing properties were investigated in detail to study the effectiveness of the incorporated intrinsic layer (i-ZnO) between the heterostructure. Under UV (365 nm, 0.06 mW/cm2) illumination the engineered p-i-n diode structure exhibited photoresponsivity of 0.338 A/W, and external quantum efficiencies of 1.15%, even under no bias conditions. The fabricated photosensors demonstrated high detectivity 1.70 × 1011 Jones and 3.42 × 1012 Jones for p-n and p-i-n diodes respectively. The remarkable enhancement in the transient photocurrent response speed of p-i-n diode compared to that of p-n diodes was also observed. Therefore, these outcomes recommend that p−NiO/i−ZnO/n−TZO diodes might be useful for flexible, see-through, and self-powered photosensors for wearable smart sensor applications.

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Flexible ultraviolet photosensors based on p-NiO/n-Zn_(1−x) Sn_(x)O heterojunction with an ZnO interfacial layer that works in self regime mode

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