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FTIR Spectroscopic Characterization of Crystallinity and Bond Rearrangement in Metal Doped V2O5Films

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper focuses on assessing the role of Sn doping in modifying V2O5 thin films through Fourier Transform Infrared (FTIR) spectral analysis. V2O5 thin films doped with 0 wt% (undoped), 1 wt%, 2 wt% and 7 wt% Sn doping labeled as VSn0, VSn1, VSn2 and VSn7 respectively. For VSn0, VSn1, VSn2, and VSn7, the V-O-V bending mode was seen at 486 cm-1, 489 cm-1, 490 cm-1, and 498 cm-1, respectively. In VSn7 alone, a wide band at 573 cm-1 was seen. For VSn0, VSn1, VSn2, and VSn7, the V-O-V asymmetric stretching mode was detected at 747 cm-1, 757 cm-1, 765 cm-1, and 774 cm-1, respectively. The V=O terminal stretching mode appeared at a wavenumber of 896 cm-1 for Vsn0, shifted to 904 cm-1 for VSn1 and VSn2, and returned to 896 cm-1 for VSn7. At 1419 cm-1 for VSn2, a vanadate stretching mode emerged, and for VSn7, it moved to 1429 cm-1. The C=O and C-H stretching vibrations were not present in any of the Sn-doped samples, but they were detected in VSn0 at 1735 cm-1 and 2922 cm-1, respectively.

Original languageEnglish
Title of host publication2025 Control Instrumentation System Conference, CISCON 2025
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798331597733
DOIs
Publication statusPublished - 2025
Event2025 Control Instrumentation System Conference, CISCON 2025 - Hybrid, Bangalore, India
Duration: 01-08-202502-08-2025

Publication series

Name2025 Control Instrumentation System Conference, CISCON 2025

Conference

Conference2025 Control Instrumentation System Conference, CISCON 2025
Country/TerritoryIndia
CityHybrid, Bangalore
Period01-08-2502-08-25

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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