GaAs(1-x)Bix: A Promising Material for Optoelectronics Applications

Kodihalli K. Nagaraja; Yuri A. Mityagin; Maksim P. Telenkov; Igor P. Kazakov

doi:10.1080/10408436.2016.1186007

GaAs_(1-x)Bi_x: A Promising Material for Optoelectronics Applications

Kodihalli K. Nagaraja^*
, Yuri A. Mityagin
, Maksim P. Telenkov
, Igor P. Kazakov

^*Corresponding author for this work

Research output: Contribution to journal › Review article › peer-review

15 Citations (Scopus)

Abstract

Bismuth alloying with GaAs has promised greater advantages in the realization of more convenient mid and near IR photonic devices owing to its novel and unique properties. The coexistence of faster band gap reduction and a strong increase in spin-orbit splitting energy with an increase in Bi concentration is one of those. However, the realization of practical devices is hindered due to several critical issues associated with the electronic properties of this material. Many of these limitations primarily arise due the difficulty obtaining high-quality structures. In this article, we review the growth and properties of GaAs_(1−x)Bi_x. We have provided a comprehensive study of the properties by considering both from a fundamental perspective and also on their potential device applications.

Original language	English
Pages (from-to)	239-265
Number of pages	27
Journal	Critical Reviews in Solid State and Materials Sciences
Volume	42
Issue number	3
DOIs	https://doi.org/10.1080/10408436.2016.1186007
Publication status	Published - 04-05-2017

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
General Chemical Engineering
Condensed Matter Physics
Physical and Theoretical Chemistry
Electrical and Electronic Engineering

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10.1080/10408436.2016.1186007

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title = "GaAs(1-x)Bix: A Promising Material for Optoelectronics Applications",

abstract = "Bismuth alloying with GaAs has promised greater advantages in the realization of more convenient mid and near IR photonic devices owing to its novel and unique properties. The coexistence of faster band gap reduction and a strong increase in spin-orbit splitting energy with an increase in Bi concentration is one of those. However, the realization of practical devices is hindered due to several critical issues associated with the electronic properties of this material. Many of these limitations primarily arise due the difficulty obtaining high-quality structures. In this article, we review the growth and properties of GaAs(1−x)Bix. We have provided a comprehensive study of the properties by considering both from a fundamental perspective and also on their potential device applications.",

author = "Nagaraja, \{Kodihalli K.\} and Mityagin, \{Yuri A.\} and Telenkov, \{Maksim P.\} and Kazakov, \{Igor P.\}",

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doi = "10.1080/10408436.2016.1186007",

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T2 - A Promising Material for Optoelectronics Applications

AU - Nagaraja, Kodihalli K.

AU - Mityagin, Yuri A.

AU - Telenkov, Maksim P.

AU - Kazakov, Igor P.

PY - 2017/5/4

Y1 - 2017/5/4

N2 - Bismuth alloying with GaAs has promised greater advantages in the realization of more convenient mid and near IR photonic devices owing to its novel and unique properties. The coexistence of faster band gap reduction and a strong increase in spin-orbit splitting energy with an increase in Bi concentration is one of those. However, the realization of practical devices is hindered due to several critical issues associated with the electronic properties of this material. Many of these limitations primarily arise due the difficulty obtaining high-quality structures. In this article, we review the growth and properties of GaAs(1−x)Bix. We have provided a comprehensive study of the properties by considering both from a fundamental perspective and also on their potential device applications.

AB - Bismuth alloying with GaAs has promised greater advantages in the realization of more convenient mid and near IR photonic devices owing to its novel and unique properties. The coexistence of faster band gap reduction and a strong increase in spin-orbit splitting energy with an increase in Bi concentration is one of those. However, the realization of practical devices is hindered due to several critical issues associated with the electronic properties of this material. Many of these limitations primarily arise due the difficulty obtaining high-quality structures. In this article, we review the growth and properties of GaAs(1−x)Bix. We have provided a comprehensive study of the properties by considering both from a fundamental perspective and also on their potential device applications.

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IS - 3

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GaAs_(1-x)Bi_x: A Promising Material for Optoelectronics Applications

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