Gamma irradiation effects on Al/n-Si Schottky junction properties

Indudhar Panduranga Vali; Pramoda Kumara Shetty; M. G. Mahesha; Rashmitha Keshav; V. G. Sathe; D. M. Phase; R. J. Choudhary

doi:10.1016/j.nimb.2018.09.035

Gamma irradiation effects on Al/n-Si Schottky junction properties

Indudhar Panduranga Vali
, Pramoda Kumara Shetty^*
, M. G. Mahesha
, Rashmitha Keshav
, V. G. Sathe
, D. M. Phase
, R. J. Choudhary

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

In this paper the gamma irradiation effects on the structural and electrical properties of n-Si and Al/n-Si Schottky junctions are presented up to a cumulative radiation dose of 1500 kGy. The structural studies using XRD and Raman spectroscopic techniques showed no greater degradation in the crystallinity of the n-Si crystals due to the irradiation effects. However, considerable variations in the I–V characteristics of Al/n-Si Schottky junctions and its junction parameters such as Schottky barrier height (Φ_B), ideality factor (n) and series resistance (R_S) indicates the presence of gamma induced defect states in the interface as well as bulk of the crystal. The surface and interface analysis of the irradiated Al/n-Si Schottky junction revealed modification in the effective work function of Al and presence of different chemical states (AlO_x–SiO_x) in the interface. The contribution of these interface trap states on the band bending properties and I–V characteristics are explained in detail by realizing the power law characteristics and energy band diagram of the Al/n-Si Schottky junction.

Original language	English
Pages (from-to)	191-197
Number of pages	7
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	436
DOIs	https://doi.org/10.1016/j.nimb.2018.09.035
Publication status	Published - 01-12-2018

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nimb.2018.09.035

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title = "Gamma irradiation effects on Al/n-Si Schottky junction properties",

abstract = "In this paper the gamma irradiation effects on the structural and electrical properties of n-Si and Al/n-Si Schottky junctions are presented up to a cumulative radiation dose of 1500 kGy. The structural studies using XRD and Raman spectroscopic techniques showed no greater degradation in the crystallinity of the n-Si crystals due to the irradiation effects. However, considerable variations in the I–V characteristics of Al/n-Si Schottky junctions and its junction parameters such as Schottky barrier height (ΦB), ideality factor (n) and series resistance (RS) indicates the presence of gamma induced defect states in the interface as well as bulk of the crystal. The surface and interface analysis of the irradiated Al/n-Si Schottky junction revealed modification in the effective work function of Al and presence of different chemical states (AlOx–SiOx) in the interface. The contribution of these interface trap states on the band bending properties and I–V characteristics are explained in detail by realizing the power law characteristics and energy band diagram of the Al/n-Si Schottky junction.",

author = "Vali, \{Indudhar Panduranga\} and Shetty, \{Pramoda Kumara\} and Mahesha, \{M. G.\} and Rashmitha Keshav and Sathe, \{V. G.\} and Phase, \{D. M.\} and Choudhary, \{R. J.\}",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2018",

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doi = "10.1016/j.nimb.2018.09.035",

language = "English",

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T1 - Gamma irradiation effects on Al/n-Si Schottky junction properties

AU - Vali, Indudhar Panduranga

AU - Shetty, Pramoda Kumara

AU - Mahesha, M. G.

AU - Keshav, Rashmitha

AU - Sathe, V. G.

AU - Phase, D. M.

AU - Choudhary, R. J.

PY - 2018/12/1

Y1 - 2018/12/1

N2 - In this paper the gamma irradiation effects on the structural and electrical properties of n-Si and Al/n-Si Schottky junctions are presented up to a cumulative radiation dose of 1500 kGy. The structural studies using XRD and Raman spectroscopic techniques showed no greater degradation in the crystallinity of the n-Si crystals due to the irradiation effects. However, considerable variations in the I–V characteristics of Al/n-Si Schottky junctions and its junction parameters such as Schottky barrier height (ΦB), ideality factor (n) and series resistance (RS) indicates the presence of gamma induced defect states in the interface as well as bulk of the crystal. The surface and interface analysis of the irradiated Al/n-Si Schottky junction revealed modification in the effective work function of Al and presence of different chemical states (AlOx–SiOx) in the interface. The contribution of these interface trap states on the band bending properties and I–V characteristics are explained in detail by realizing the power law characteristics and energy band diagram of the Al/n-Si Schottky junction.

AB - In this paper the gamma irradiation effects on the structural and electrical properties of n-Si and Al/n-Si Schottky junctions are presented up to a cumulative radiation dose of 1500 kGy. The structural studies using XRD and Raman spectroscopic techniques showed no greater degradation in the crystallinity of the n-Si crystals due to the irradiation effects. However, considerable variations in the I–V characteristics of Al/n-Si Schottky junctions and its junction parameters such as Schottky barrier height (ΦB), ideality factor (n) and series resistance (RS) indicates the presence of gamma induced defect states in the interface as well as bulk of the crystal. The surface and interface analysis of the irradiated Al/n-Si Schottky junction revealed modification in the effective work function of Al and presence of different chemical states (AlOx–SiOx) in the interface. The contribution of these interface trap states on the band bending properties and I–V characteristics are explained in detail by realizing the power law characteristics and energy band diagram of the Al/n-Si Schottky junction.

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U2 - 10.1016/j.nimb.2018.09.035

DO - 10.1016/j.nimb.2018.09.035

M3 - Article

AN - SCOPUS:85054197214

SN - 0168-583X

VL - 436

SP - 191

EP - 197

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Gamma irradiation effects on Al/n-Si Schottky junction properties

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