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Gamma Irradiation Effects on n-ZnSe/n-Si Isotype Heterojunctions
Indudhar Panduranga Vali
, Rashmitha Keshav
, M. Rajeshwari
, K. S. Vaishnavi
,
M. G. Mahesha
,
Pramoda Kumara Shetty
*
*
Corresponding author for this work
Department of Physics, Manipal Institute of Technology, Manipal
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Engineering
Barrier Height
50%
Current-Voltage Characteristic
50%
Heterojunctions
100%
Induced Defect
50%
Interface Trap
50%
Lattice Constant
50%
Lattice Mismatch
50%
Lattice Parameter
50%
Nanocrystalline
50%
Ray Diffraction
50%
Rectification
50%
Schottky Barrier
50%
Si Substrate
50%
Space Charge
50%
Thin Films
100%
Physics
Electrical Property
50%
Gamma Irradiation
100%
Heterojunctions
100%
Lattice Mismatch
50%
Lattice Parameter
50%
Nanocrystalline
50%
Rectification
50%
Schottky Barrier Height
50%
Space Charge
50%
Thermal Evaporation
50%
Thermionic Emission
50%
Thin Films
100%
X Ray Diffraction
50%
INIS
barriers
40%
crystal defects
20%
crystallography
20%
defects
20%
electrical properties
20%
evaporation
20%
height
20%
heterojunctions
100%
i-v characteristic
20%
interfaces
20%
irradiation
100%
lattice parameters
20%
modifications
20%
orientation
20%
phase transformations
20%
radiation doses
40%
space charge
20%
substrates
20%
thermionic emission
20%
thin films
40%
traps
20%
variations
20%
x-ray diffraction
20%
zinc selenides
100%
Chemistry
Electrical Property
50%
Gamma-Irradiation
100%
Interface Trap
50%
Lattice Constant
50%
Lattice Parameter
50%
Schottky Contact
50%
Space Charge
50%
Thermal Evaporation
50%
Thermionic Emission
50%
X-Ray Diffraction
50%
Material Science
Current-Voltage Characteristic
50%
Heterojunction
100%
Lattice Constant
50%
Lattice Mismatch
50%
Nanocrystalline
50%
Schottky Barrier
50%
Thin Films
100%
X-Ray Diffraction
50%