General diffusivity-mobility relationship for heavily doped semiconductors

Arif Khan; Atanu Das

doi:10.1515/zna-2009-3-414

General diffusivity-mobility relationship for heavily doped semiconductors

Arif Khan^*
, Atanu Das

^*Corresponding author for this work

Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A relationship between diffusivity and mobility in degenerate semiconductors is presented. The relationship is general enough to be applicable to both non-degenerate and degenerate semiconductors. It is suitable for the investigation of the electrical transport in heavily doped semiconductors.

Original language	English
Pages (from-to)	257-262
Number of pages	6
Journal	Zeitschrift fur Naturforschung - Section A Journal of Physical Sciences
Volume	64
Issue number	3-4
DOIs	https://doi.org/10.1515/zna-2009-3-414
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Mathematical Physics
General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1515/zna-2009-3-414

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title = "General diffusivity-mobility relationship for heavily doped semiconductors",

abstract = "A relationship between diffusivity and mobility in degenerate semiconductors is presented. The relationship is general enough to be applicable to both non-degenerate and degenerate semiconductors. It is suitable for the investigation of the electrical transport in heavily doped semiconductors.",

author = "Arif Khan and Atanu Das",

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AU - Khan, Arif

AU - Das, Atanu

PY - 2009

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DO - 10.1515/zna-2009-3-414

M3 - Article

AN - SCOPUS:77950562387

SN - 0932-0784

VL - 64

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JO - Zeitschrift fur Naturforschung - Section A Journal of Physical Sciences

JF - Zeitschrift fur Naturforschung - Section A Journal of Physical Sciences

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ER -

General diffusivity-mobility relationship for heavily doped semiconductors

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