Growth and characterization of semiconducting cadmium selenide thin films

K. N. Shreekanthan; B. V. Rajendra; V. B. Kasturi; G. K. Shivakumar

doi:10.1002/crat.200310003

Growth and characterization of semiconducting cadmium selenide thin films

K. N. Shreekanthan, B. V. Rajendra, V. B. Kasturi, G. K. Shivakumar

Department of Physics, Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

Semiconducting thin films of cadmium selenide have been grown by conventional thermal evaporation technique. The effect of various growth parameters like rate of deposition and deposition temperature has been studied in detail. Films deposited at room temperature are cadmium rich with segregated selenium globules. A deposition temperature of 453K has been found to yield stoichiometric, homogeneous films. The films have been analysed for optical band gap and thermal activation energies. Films of low electrical resistivity have been obtained for possible applications.

Original language	English
Pages (from-to)	30-33
Number of pages	4
Journal	Crystal Research and Technology
Volume	38
Issue number	1
DOIs	https://doi.org/10.1002/crat.200310003
Publication status	Published - 01-01-2003

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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AU - Shivakumar, G. K.

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Growth and characterization of semiconducting cadmium selenide thin films

Abstract

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