Growth and study of CuIn1-xAlxSe2 thin films for photovoltaic applications

Dhananjaya Kekuda; J. Nagaraju; S. B. Krupanidhi

doi:10.1063/1.4710375

Growth and study of CuIn_1-xAl_xSe₂ thin films for photovoltaic applications

Dhananjaya Kekuda, J. Nagaraju, S. B. Krupanidhi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Chalcopyrite semiconductors such as CuIn_1-xAl_xSe ₂ have been currently investigated as a promising material for photovoltaic applications since their band gap energy matches with the solar spectrum. The absorber layers as thin as 2μm are sufficient for the absorption of the visible part of sun light, because they are characterized by a high absorption coefficient. The absorber layers are grown by the multi-source evaporation technique. From the X-ray analysis it is found that the films had a preferred oriented along the (112) direction, which confirmed the chalcopyrite phase. The optical studies revealed that replacing 50% of In by Al, will bring the band gap energy to 1.5eV, which will match the solar spectrum. Photo-response of the heterostructure is presented.

Original language	English
Title of host publication	Solid State Physics - Proceedings of the 56th DAE Solid State Physics Symposium 2011
Pages	1067-1068
Number of pages	2
Volume	1447
Edition	1
DOIs	https://doi.org/10.1063/1.4710375
Publication status	Published - 01-12-2012
Event	56th DAE Solid State Physics Symposium 2011 - Kattankulathur, Tamilnadu, India Duration: 19-12-2011 → 23-12-2011

Conference

Conference	56th DAE Solid State Physics Symposium 2011
Country/Territory	India
City	Kattankulathur, Tamilnadu
Period	19-12-11 → 23-12-11

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1063/1.4710375

Cite this

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title = "Growth and study of CuIn1-xAlxSe2 thin films for photovoltaic applications",

abstract = "Chalcopyrite semiconductors such as CuIn1-xAlxSe 2 have been currently investigated as a promising material for photovoltaic applications since their band gap energy matches with the solar spectrum. The absorber layers as thin as 2μm are sufficient for the absorption of the visible part of sun light, because they are characterized by a high absorption coefficient. The absorber layers are grown by the multi-source evaporation technique. From the X-ray analysis it is found that the films had a preferred oriented along the (112) direction, which confirmed the chalcopyrite phase. The optical studies revealed that replacing 50% of In by Al, will bring the band gap energy to 1.5eV, which will match the solar spectrum. Photo-response of the heterostructure is presented.",

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N2 - Chalcopyrite semiconductors such as CuIn1-xAlxSe 2 have been currently investigated as a promising material for photovoltaic applications since their band gap energy matches with the solar spectrum. The absorber layers as thin as 2μm are sufficient for the absorption of the visible part of sun light, because they are characterized by a high absorption coefficient. The absorber layers are grown by the multi-source evaporation technique. From the X-ray analysis it is found that the films had a preferred oriented along the (112) direction, which confirmed the chalcopyrite phase. The optical studies revealed that replacing 50% of In by Al, will bring the band gap energy to 1.5eV, which will match the solar spectrum. Photo-response of the heterostructure is presented.

AB - Chalcopyrite semiconductors such as CuIn1-xAlxSe 2 have been currently investigated as a promising material for photovoltaic applications since their band gap energy matches with the solar spectrum. The absorber layers as thin as 2μm are sufficient for the absorption of the visible part of sun light, because they are characterized by a high absorption coefficient. The absorber layers are grown by the multi-source evaporation technique. From the X-ray analysis it is found that the films had a preferred oriented along the (112) direction, which confirmed the chalcopyrite phase. The optical studies revealed that replacing 50% of In by Al, will bring the band gap energy to 1.5eV, which will match the solar spectrum. Photo-response of the heterostructure is presented.

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