TY - GEN
T1 - High efficiency High Output Power and Wideband GaN HEMT Power Amplifier over entire S-Band
AU - Kumar, Bandi Sampath
AU - Vandana, Akula
AU - HariChandana, Akurati Bindu
AU - Gorre, Pradeep
AU - Samantaray, Aswini kumar
AU - Amera, Sandeep Kumar
N1 - Publisher Copyright:
© 2025 IEEE.
PY - 2025
Y1 - 2025
N2 - This work proposes a high Output Power, high efficiency and wideband GaN HEMT power amplifier (PA) in S-band frequency for high efficiency and wideband applications. The design methodology employs a U-shaped Matching network (UMN) at input and output to suppress harmonics impedances which improves the i/o power, efficiency, and bandwidth over S-band with minimal power consumption The work employs, a Class AB Power Amplifier integrated with the proposed UMN is designed using 0.15 µm GaN HEMT. The simulated results proves that the proposed design achieves a high power added efficiency (PAE) of 49 %- 68 %, output power, Pout, of 39 dBm- 44.5 dBm, drain efficiency (DE) of 54%- 80 %, and a nearly flat gain small-signal gain of 13.8 dB over a frequency of 2 GHz-4GHz.
AB - This work proposes a high Output Power, high efficiency and wideband GaN HEMT power amplifier (PA) in S-band frequency for high efficiency and wideband applications. The design methodology employs a U-shaped Matching network (UMN) at input and output to suppress harmonics impedances which improves the i/o power, efficiency, and bandwidth over S-band with minimal power consumption The work employs, a Class AB Power Amplifier integrated with the proposed UMN is designed using 0.15 µm GaN HEMT. The simulated results proves that the proposed design achieves a high power added efficiency (PAE) of 49 %- 68 %, output power, Pout, of 39 dBm- 44.5 dBm, drain efficiency (DE) of 54%- 80 %, and a nearly flat gain small-signal gain of 13.8 dB over a frequency of 2 GHz-4GHz.
UR - https://www.scopus.com/pages/publications/105012573545
UR - https://www.scopus.com/pages/publications/105012573545#tab=citedBy
U2 - 10.1109/ICMOCE64100.2025.11076968
DO - 10.1109/ICMOCE64100.2025.11076968
M3 - Conference contribution
AN - SCOPUS:105012573545
T3 - 3rd International Conference on Microwave, Optical and Communication Engineering, ICMOCE 2025
BT - 3rd International Conference on Microwave, Optical and Communication Engineering, ICMOCE 2025
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 3rd International Conference on Microwave, Optical and Communication Engineering, ICMOCE 2025
Y2 - 23 May 2025 through 25 May 2025
ER -