TY - JOUR
T1 - High-efficiency multilevel inverter topology with minimal switching devices for enhanced power quality and reduced losses
AU - Jayaraman, Ramesh
AU - Thamizharasan, Sandirasegarane
AU - Baskaran, Jeevarathinam
AU - Meena, Veerpratap
AU - Bahadur, Jitendra
AU - Jadoun, Vinay Kumar
N1 - Publisher Copyright:
© 2025 The Author(s). IET Power Electronics published by John Wiley & Sons Ltd on behalf of The Institution of Engineering and Technology.
PY - 2025/1/1
Y1 - 2025/1/1
N2 - The advent of multilevel inverters (MLIs) has brought significant advancements in their applications across industrial, residential, and renewable energy sectors, as they produce high-quality output voltage that closely approximates a sinusoid in small voltage steps or levels, resulting in lower total harmonic distortion (THD) and reduced electromagnetic interference (EMI). However, the MLI topologies require more switching unidirectional/bidirectional semiconductor devices with high standing voltage, gate drivers, and complex control strategies while attaining higher voltage levels. From this perspective of reducing component count and gate drivers, the objective is to develop a new MLI topology that overcomes the drawbacks above. In this article, a novel MLI topology is introduced in symmetric and asymmetric configurations aiming to attain fewer power electronic devices for synthesizing more steps in the load voltage in contrast with conventional topologies. The idea behind the approach is coining the series connected voltage source, which imbibes bidirectional current flow with an additional voltage source for performing algebraic operation under asymmetrical modes of operation. The proposed topology uses minimal on-state switching devices leading to a diminution of power loss and voltage drop. The suggested topology is optimized for a fewer number of power devices, an input DC supply, and auxiliary gate drivers to achieve a maximum voltage level in the load terminals. The suggested topology has been verified in SIMULINK and the laboratory prototype is constructed in line with the simulated response to demonstrate its performance suitable for real-time applications.
AB - The advent of multilevel inverters (MLIs) has brought significant advancements in their applications across industrial, residential, and renewable energy sectors, as they produce high-quality output voltage that closely approximates a sinusoid in small voltage steps or levels, resulting in lower total harmonic distortion (THD) and reduced electromagnetic interference (EMI). However, the MLI topologies require more switching unidirectional/bidirectional semiconductor devices with high standing voltage, gate drivers, and complex control strategies while attaining higher voltage levels. From this perspective of reducing component count and gate drivers, the objective is to develop a new MLI topology that overcomes the drawbacks above. In this article, a novel MLI topology is introduced in symmetric and asymmetric configurations aiming to attain fewer power electronic devices for synthesizing more steps in the load voltage in contrast with conventional topologies. The idea behind the approach is coining the series connected voltage source, which imbibes bidirectional current flow with an additional voltage source for performing algebraic operation under asymmetrical modes of operation. The proposed topology uses minimal on-state switching devices leading to a diminution of power loss and voltage drop. The suggested topology is optimized for a fewer number of power devices, an input DC supply, and auxiliary gate drivers to achieve a maximum voltage level in the load terminals. The suggested topology has been verified in SIMULINK and the laboratory prototype is constructed in line with the simulated response to demonstrate its performance suitable for real-time applications.
UR - https://www.scopus.com/pages/publications/85215293304
UR - https://www.scopus.com/pages/publications/85215293304#tab=citedBy
U2 - 10.1049/pel2.12851
DO - 10.1049/pel2.12851
M3 - Article
AN - SCOPUS:85215293304
SN - 1755-4535
VL - 18
JO - IET Power Electronics
JF - IET Power Electronics
IS - 1
M1 - e12851
ER -