TY - JOUR
T1 - Hydrogen termination of CVD diamond films by high-temperature annealing at atmospheric pressure
AU - Seshan, V.
AU - Ullien, D.
AU - Castellanos-Gomez, A.
AU - Sachdeva, S.
AU - Murthy, D. H.K.
AU - Savenije, T. J.
AU - Ahmad, H. A.
AU - Nunney, T. S.
AU - Janssens, S. D.
AU - Haenen, K.
AU - Nesládek, M.
AU - Van Der Zant, H. S.J.
AU - Sudhölter, E. J.R.
AU - De Smet, L. C.P.M.
PY - 2013/6/21
Y1 - 2013/6/21
N2 - A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrys-talline diamond films were treated according to our annealing method using a H2 gas flow down to ∼50 ml/min (STP) at ∼850°C. The films were extensively evaluated by surface wettability, electron affinity, elemental composition, photoconductivity, and redox studies. In addition, electrografting experiments were performed. The surface characteristics as well as the optoelectronic and redox properties of the annealed films were found to be very similar to hydrogen plasma-treated films. Moreover, the presented method is compatible with atmospheric pressure and provides a low-cost solution to hydrogenate CVD diamond, which makes it interesting for industrial applications. The plausible mechanism for the hydrogen termination of CVD diamond films is based on the formation of surface carbon dangling bonds and carbon-carbon unsaturated bonds at the applied temperature, which react with molecular hydrogen to produce a hydrogen-terminated surface.
AB - A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrys-talline diamond films were treated according to our annealing method using a H2 gas flow down to ∼50 ml/min (STP) at ∼850°C. The films were extensively evaluated by surface wettability, electron affinity, elemental composition, photoconductivity, and redox studies. In addition, electrografting experiments were performed. The surface characteristics as well as the optoelectronic and redox properties of the annealed films were found to be very similar to hydrogen plasma-treated films. Moreover, the presented method is compatible with atmospheric pressure and provides a low-cost solution to hydrogenate CVD diamond, which makes it interesting for industrial applications. The plausible mechanism for the hydrogen termination of CVD diamond films is based on the formation of surface carbon dangling bonds and carbon-carbon unsaturated bonds at the applied temperature, which react with molecular hydrogen to produce a hydrogen-terminated surface.
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U2 - 10.1063/1.4810866
DO - 10.1063/1.4810866
M3 - Article
AN - SCOPUS:84885969692
SN - 0021-9606
VL - 138
JO - Journal of Chemical Physics
JF - Journal of Chemical Physics
IS - 23
M1 - 234707
ER -