I – V characterization of vacuum deposited zinc selenide – silicon hetero junction

R Keshav, I P Vali, P K Shetty, K S Vaishnavi, M Rajeshwari, M G Mahesha

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	841-846
Number of pages	6
Journal	Indian Journal of Pure & Applied Physics
Volume	58
Issue number	December
Publication status	Published - 2020

Access to Document

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title = "I – V characterization of vacuum deposited zinc selenide – silicon hetero junction",

author = "R Keshav and Vali, {I P} and Shetty, {P K} and Vaishnavi, {K S} and M Rajeshwari and Mahesha, {M G}",

year = "2020",

language = "English",

volume = "58",

pages = "841--846",

journal = "Indian Journal of Pure & Applied Physics",

number = "December",

}

TY - JOUR

T1 - I – V characterization of vacuum deposited zinc selenide – silicon hetero junction

AU - Keshav, R

AU - Vali, I P

AU - Shetty, P K

AU - Vaishnavi, K S

AU - Rajeshwari, M

AU - Mahesha, M G

PY - 2020

Y1 - 2020

M3 - Article

VL - 58

SP - 841

EP - 846

JO - Indian Journal of Pure & Applied Physics

JF - Indian Journal of Pure & Applied Physics

IS - December

ER -