Impact of Drain Underlap and High Bandgap Strip on Cylindrical Gate All Around Tunnel FET and its Influence on Analog/RF Performance

Arya Dutt; Sanjana Tiwari; Abhishek Kumar Upadhyay; Ribu Mathew; Ankur Beohar

doi:10.1007/s12633-022-01692-w

Impact of Drain Underlap and High Bandgap Strip on Cylindrical Gate All Around Tunnel FET and its Influence on Analog/RF Performance

Arya Dutt
, Sanjana Tiwari
, Abhishek Kumar Upadhyay
, Ribu Mathew
, Ankur Beohar^*

^*Corresponding author for this work

Manipal School of Information Sciences, Manipal

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

This paper comprises of design and analysis of novel gate all around (GAA) cylindrical tunnel field effect transistor (TFET) using technology computer aided designing (TCAD) tool. The device designing incorporates drain underlap (DU) and high band-gap strip (HBS) at drain-channel junction. The purpose of DU is to minimize the drain induced influenced short channel effects (SCEs). While, the HBS is used to decrease the tunneling of carriers from channel-drain interface, which will result suppressed OFF-current (I_OFF). The analysis of analog/RF parameters of proffered TFET device is carried out in terms of drain current profile, subthreshold swing (SS), parasitic capacitance, transconductance (g_m) , cut-off frequency (f_T) , maximum oscillation frequency (f_max) , and gain bandwidth (GBW).

Original language	English
Pages (from-to)	9789-9796
Number of pages	8
Journal	Silicon
Volume	14
Issue number	15
DOIs	https://doi.org/10.1007/s12633-022-01692-w
Publication status	Published - 10-2022

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1007/s12633-022-01692-w

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@article{8deb852a738f4bdbbb8a29d6dc1a0a52,

title = "Impact of Drain Underlap and High Bandgap Strip on Cylindrical Gate All Around Tunnel FET and its Influence on Analog/RF Performance",

abstract = "This paper comprises of design and analysis of novel gate all around (GAA) cylindrical tunnel field effect transistor (TFET) using technology computer aided designing (TCAD) tool. The device designing incorporates drain underlap (DU) and high band-gap strip (HBS) at drain-channel junction. The purpose of DU is to minimize the drain induced influenced short channel effects (SCEs). While, the HBS is used to decrease the tunneling of carriers from channel-drain interface, which will result suppressed OFF-current (IOFF). The analysis of analog/RF parameters of proffered TFET device is carried out in terms of drain current profile, subthreshold swing (SS), parasitic capacitance, transconductance (gm) , cut-off frequency (fT) , maximum oscillation frequency (fmax) , and gain bandwidth (GBW).",

author = "Arya Dutt and Sanjana Tiwari and Upadhyay, \{Abhishek Kumar\} and Ribu Mathew and Ankur Beohar",

note = "Publisher Copyright: {\textcopyright} 2022, The Author(s), under exclusive licence to Springer Nature B.V.",

year = "2022",

month = oct,

doi = "10.1007/s12633-022-01692-w",

language = "English",

volume = "14",

pages = "9789--9796",

journal = "Silicon",

issn = "1876-990X",

publisher = "Springer Netherlands",

number = "15",

}

TY - JOUR

T1 - Impact of Drain Underlap and High Bandgap Strip on Cylindrical Gate All Around Tunnel FET and its Influence on Analog/RF Performance

AU - Dutt, Arya

AU - Tiwari, Sanjana

AU - Upadhyay, Abhishek Kumar

AU - Mathew, Ribu

AU - Beohar, Ankur

PY - 2022/10

Y1 - 2022/10

N2 - This paper comprises of design and analysis of novel gate all around (GAA) cylindrical tunnel field effect transistor (TFET) using technology computer aided designing (TCAD) tool. The device designing incorporates drain underlap (DU) and high band-gap strip (HBS) at drain-channel junction. The purpose of DU is to minimize the drain induced influenced short channel effects (SCEs). While, the HBS is used to decrease the tunneling of carriers from channel-drain interface, which will result suppressed OFF-current (IOFF). The analysis of analog/RF parameters of proffered TFET device is carried out in terms of drain current profile, subthreshold swing (SS), parasitic capacitance, transconductance (gm) , cut-off frequency (fT) , maximum oscillation frequency (fmax) , and gain bandwidth (GBW).

AB - This paper comprises of design and analysis of novel gate all around (GAA) cylindrical tunnel field effect transistor (TFET) using technology computer aided designing (TCAD) tool. The device designing incorporates drain underlap (DU) and high band-gap strip (HBS) at drain-channel junction. The purpose of DU is to minimize the drain induced influenced short channel effects (SCEs). While, the HBS is used to decrease the tunneling of carriers from channel-drain interface, which will result suppressed OFF-current (IOFF). The analysis of analog/RF parameters of proffered TFET device is carried out in terms of drain current profile, subthreshold swing (SS), parasitic capacitance, transconductance (gm) , cut-off frequency (fT) , maximum oscillation frequency (fmax) , and gain bandwidth (GBW).

UR - https://www.scopus.com/pages/publications/85124330219

UR - https://www.scopus.com/pages/publications/85124330219#tab=citedBy

U2 - 10.1007/s12633-022-01692-w

DO - 10.1007/s12633-022-01692-w

M3 - Article

AN - SCOPUS:85124330219

SN - 1876-990X

VL - 14

SP - 9789

EP - 9796

JO - Silicon

JF - Silicon

IS - 15

ER -

Impact of Drain Underlap and High Bandgap Strip on Cylindrical Gate All Around Tunnel FET and its Influence on Analog/RF Performance

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