Impact of elemental composition on the SnS_1-xSe_x phase formation and its absorber layer properties

This study investigates the influence of elemental composition on SnS_1-xSe_x phase formation and its absorber layer properties for photovoltaic applications. The influence of the elemental composition on the formation of SnS_1-xSe_x mixed crystal structure and its optical, morphological, elemental, and electrical properties are studied in detail. The X-ray diffraction and Raman spectroscopy revealed the change in the crystal structure of SnS_1-xSe_x corresponding to its elemental composition. Further, enhancing the Se concentration to 0.75 leads to the narrowness in the band gap as 1.99 eV. The SnS_1-xSe_x thin films exhibited p-type conductivity with the bulk concentration of charge carriers, resistivity, and mobility of 5.77 × 10¹⁸–1.43 × 10¹⁸, 4.45–4.83 (Ω-cm), 11.4 – 55.4 (cm²/V-s) respectively. Among that, the films deposited using the elemental composition 0.75 exhibit optimal optical and electrical properties for an absorber layer. Overall, the results reveal the role of elemental composition in the photovoltaic properties of SnS_1-xSe_x thin film.