Impact of Forward Body Biasing on Threshold Voltage and Transconductance in n-Channel MOSFETs for Sustainable Electronics

This paper explores how forward body biasing affects the threshold voltage and transconductance of the n-channel MOSFETs. COMSOL Multiphysics simulation tool was used to design and model the n-channel MOSFETs. This research investigates the performance of n-channel MOSFETs for different dielectric materials. The dielectric layer in MOSFETs separates the gate polysilicon electrode from the semiconductor channel, controlling the flow of current through the device. Dielectric materials chosen in this research are SiO₂, HfO₂, ZnO, and BaTiO₃ to evaluate the transfer characteristics of n-channel MOSFETs. From the transfer characteristics, the threshold voltage and transconductances were determined. The forward body bias voltage varied from 0 to 0.75 V with a step of 0.25 V. It was found that with the increase in forward body biasing, there was a drop in the threshold voltage. Further, it was also observed that increasing forward body biasing results in an improvement in the transconductance of the n-channel MOSFETs. This phenomenon was observed for all the dielectric materials. Our studies show that HfO₂ produced a higher transconductance of 1.4581 μA/V at a forward body bias of 0.75 V as compared to SiO₂ with 0.6073 μA/V, ZnO with 0.5926 μA/V, and BaTiO₃ with 0.0978 μA/V for the same forward body biasing. These results show that HfO₂ is a promising dielectric material for the gate terminal of n-channel MOSFETs. Our findings demonstrate the benefits of increased transconductance in applications such as analog-to-digital converters and switching power supplies, since precise signal conversion and quicker switching speeds are made possible by increased transconductance. Forward body biasing lowers the MOSFET threshold voltage, enhancing drive current and transconductance, improving switching speed and performance in low-voltage operation for sustainable electronic applications.