Impact of Graphene Oxide on the Physical Properties of the Inorganic 2D Semiconductor Material Based Indium(III) Sulfide

Thin-film-based solar cell research is a critical focus for materials scientists due to its rapid growth as a sustainable energy solution. Indium sulfide (In₂S₃) has emerged as a promising material in the development of CdTe-based photovoltaic devices. In₂S₃; an inorganic two-dimensional semiconductor, has attracted significant interest for its potential in thin-film photovoltaics, photoelectrochemical cells, and other energy-related applications. Despite this growing interest, the commercial form of In₂S₃ remains under characterized. In this study, we systematically investigate the physical characteristics of graphene oxide (GO) incorporated into powdered β-phase In₂S₃. The samples were analyzed using X-ray diffraction (XRD) analysis, X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and impedance spectroscopy (IS). XRD analysis confirmed that all samples were polycrystalline and crystallized in the tetragonal β-phase, with a reduction in crystalline size as the GO content increased. XPS analysis indicated the formation of oxygen vacancies without significant changes in elemental composition. TEM images showed that GO was well dispersed across the surface of In2S3, resulting in a reduced particle size. Electrical characteristics, measured via impedance spectroscopy, showed semiconducting behavior with a decrease in resistance as temperature increased, indicating enhanced conductivity. The results suggest that GO-doped In₂S₃ pellets could serve as promising materials for photovoltaic systems, especially as optical windows in solar cells. The study offers valuable insights into the role of GO in modulating the properties of In₂S₃ and highlights its potential for optimizing materials used in solar applications.