Implications of electron beam irradiation on Al/n-Si Schottky junction properties

Indudhar Panduranga Vali; Pramoda Kumara Shetty; M. G. Mahesha; V. C. Petwal; Jishnu Dwivedi; D. M. Phase; R. J. Choudhary

doi:10.1016/j.microrel.2018.07.031

Implications of electron beam irradiation on Al/n-Si Schottky junction properties

Indudhar Panduranga Vali
, Pramoda Kumara Shetty^*
, M. G. Mahesha
, V. C. Petwal
, Jishnu Dwivedi
, D. M. Phase
, R. J. Choudhary

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The 7.5 MeV electron beam irradiation (EBI) effects on the Al/n-Si Schottky junction properties is studied in detail by analyzing I-V characteristics, power law characteristics, photoelectron spectra and energy band diagrams. The modifications in the junction parameters such as Schottky barrier height (Φ_B), ideality factor (n), and series resistance (R_S) at different irradiation doses are caused due to the formation of Al₂O₃-SiO₂ dielectric medium in the interface of Al and n-Si. As a result, Φ_B and band bending properties of the junction were modified. A linear correlation of Φ_B with EBI dose, interface trap states (m) and effective work functions (EWFs) suggests that the EBI technique is particularly advantageous for the miniature of devices which use band lineup as a key parameter in the device processing.

Original language	English
Pages (from-to)	179-184
Number of pages	6
Journal	Microelectronics Reliability
Volume	91
DOIs	https://doi.org/10.1016/j.microrel.2018.07.031
Publication status	Published - 01-12-2018

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Safety, Risk, Reliability and Quality
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.microrel.2018.07.031

Cite this

@article{e4fb10f895564ecb8a0674e1e5c2add2,

title = "Implications of electron beam irradiation on Al/n-Si Schottky junction properties",

abstract = "The 7.5 MeV electron beam irradiation (EBI) effects on the Al/n-Si Schottky junction properties is studied in detail by analyzing I-V characteristics, power law characteristics, photoelectron spectra and energy band diagrams. The modifications in the junction parameters such as Schottky barrier height (ΦB), ideality factor (n), and series resistance (RS) at different irradiation doses are caused due to the formation of Al2O3-SiO2 dielectric medium in the interface of Al and n-Si. As a result, ΦB and band bending properties of the junction were modified. A linear correlation of ΦB with EBI dose, interface trap states (m) and effective work functions (EWFs) suggests that the EBI technique is particularly advantageous for the miniature of devices which use band lineup as a key parameter in the device processing.",

author = "Vali, \{Indudhar Panduranga\} and Shetty, \{Pramoda Kumara\} and Mahesha, \{M. G.\} and Petwal, \{V. C.\} and Jishnu Dwivedi and Phase, \{D. M.\} and Choudhary, \{R. J.\}",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier Ltd",

year = "2018",

month = dec,

day = "1",

doi = "10.1016/j.microrel.2018.07.031",

language = "English",

volume = "91",

pages = "179--184",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Implications of electron beam irradiation on Al/n-Si Schottky junction properties

AU - Vali, Indudhar Panduranga

AU - Shetty, Pramoda Kumara

AU - Mahesha, M. G.

AU - Petwal, V. C.

AU - Dwivedi, Jishnu

AU - Phase, D. M.

AU - Choudhary, R. J.

PY - 2018/12/1

Y1 - 2018/12/1

N2 - The 7.5 MeV electron beam irradiation (EBI) effects on the Al/n-Si Schottky junction properties is studied in detail by analyzing I-V characteristics, power law characteristics, photoelectron spectra and energy band diagrams. The modifications in the junction parameters such as Schottky barrier height (ΦB), ideality factor (n), and series resistance (RS) at different irradiation doses are caused due to the formation of Al2O3-SiO2 dielectric medium in the interface of Al and n-Si. As a result, ΦB and band bending properties of the junction were modified. A linear correlation of ΦB with EBI dose, interface trap states (m) and effective work functions (EWFs) suggests that the EBI technique is particularly advantageous for the miniature of devices which use band lineup as a key parameter in the device processing.

AB - The 7.5 MeV electron beam irradiation (EBI) effects on the Al/n-Si Schottky junction properties is studied in detail by analyzing I-V characteristics, power law characteristics, photoelectron spectra and energy band diagrams. The modifications in the junction parameters such as Schottky barrier height (ΦB), ideality factor (n), and series resistance (RS) at different irradiation doses are caused due to the formation of Al2O3-SiO2 dielectric medium in the interface of Al and n-Si. As a result, ΦB and band bending properties of the junction were modified. A linear correlation of ΦB with EBI dose, interface trap states (m) and effective work functions (EWFs) suggests that the EBI technique is particularly advantageous for the miniature of devices which use band lineup as a key parameter in the device processing.

UR - https://www.scopus.com/pages/publications/85049470171

UR - https://www.scopus.com/pages/publications/85049470171#tab=citedBy

U2 - 10.1016/j.microrel.2018.07.031

DO - 10.1016/j.microrel.2018.07.031

M3 - Article

AN - SCOPUS:85049470171

SN - 0026-2714

VL - 91

SP - 179

EP - 184

JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -

Implications of electron beam irradiation on Al/n-Si Schottky junction properties

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this