TY - JOUR
T1 - Improved electrical conductivity and power factor in Sn and Se co-doped melt-grown Bi2Te3 single crystal
AU - Hegde, Ganesh Shridhar
AU - Prabhu, A. N.
AU - Chattopadhyay, M. K.
N1 - Funding Information:
Ganesh Shridhar Hegde (GSH) likes to acknowledge the Manipal Academy of Higher Education for delivering financial support from the doctoral fellowship of Dr. T. M. A. Pai. GSH would like to show gratitude towards Mr. Srihari N. V., Mr. Manoj S.P., Mr. Pawan Acharya for their co-operation. ANP is thankful for the financial support provided by UGC-DAE, Mumbai, under the project Grant of UDCSR/MUM/AO/CRS-M-314/2020/812. The authors want to express their gratitude towards UGC DAE personnel Dr. V. Raghavendra reddy for providing the HRXRD facility. The authors also would like to thank Dr. Dhananjaya Kekuda Dr. Mahesha M. G for their help and co-operation.
Publisher Copyright:
© 2021, The Author(s).
PY - 2021/10
Y1 - 2021/10
N2 - In the current work, growth and thermoelectric characterization of tin and selenium co-doped single crystal bismuth telluride have been carried out in the range of temperature 10–400 K. The crystals show hexagonal crystal structure with R3 ¯ m space group. The direction of growth, quality of the single crystals, the density of dislocation, and dopants effect on the inner plane structure of the crystals have been analyzed through high-resolution X-ray diffraction study. Energy dispersive analysis of X-rays approves the elemental composition, and field emission scanning electron microscopy shows uniform growth with micro precipitates on the surface of the crystals. Quasi degenerate and non-degenerate electrical resistivity is observed in the pristine and doped samples, respectively. Temperature-dependent Seebeck coefficient measurements confirm the n-type semiconducting nature of the pristine as well as doped samples. Temperature-dependent power factor of (Bi0.96Sn0.04)2Te2.7Se0.3 is found to increase by 1.1 times, and electrical resistivity reduced by 3.3 times as compared to pristine Bi2Te3.
AB - In the current work, growth and thermoelectric characterization of tin and selenium co-doped single crystal bismuth telluride have been carried out in the range of temperature 10–400 K. The crystals show hexagonal crystal structure with R3 ¯ m space group. The direction of growth, quality of the single crystals, the density of dislocation, and dopants effect on the inner plane structure of the crystals have been analyzed through high-resolution X-ray diffraction study. Energy dispersive analysis of X-rays approves the elemental composition, and field emission scanning electron microscopy shows uniform growth with micro precipitates on the surface of the crystals. Quasi degenerate and non-degenerate electrical resistivity is observed in the pristine and doped samples, respectively. Temperature-dependent Seebeck coefficient measurements confirm the n-type semiconducting nature of the pristine as well as doped samples. Temperature-dependent power factor of (Bi0.96Sn0.04)2Te2.7Se0.3 is found to increase by 1.1 times, and electrical resistivity reduced by 3.3 times as compared to pristine Bi2Te3.
UR - https://www.scopus.com/pages/publications/85114612990
UR - https://www.scopus.com/pages/publications/85114612990#tab=citedBy
U2 - 10.1007/s10854-021-06946-8
DO - 10.1007/s10854-021-06946-8
M3 - Article
AN - SCOPUS:85114612990
SN - 0957-4522
VL - 32
SP - 24871
EP - 24888
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 20
ER -