TY - JOUR
T1 - Improved nonlinear optical absorption mechanism and susceptibility (χ(3)) of CdS nanostructured thin films
T2 - Role of zinc doping
AU - Bairy, Raghavendra
AU - Jayarama, A.
AU - Kulkarni, Suresh D.
AU - Murari, M. S.
AU - Vijeth, H.
N1 - Funding Information:
The author Dr. Raghavendra Bairy would like to thank the N.M.A.M. Institute of Technology, Nitte, India for providing the research facilities and encouraging the analysis to be carried out. The authors are grateful to the DST-PURSE laboratory of Mangalore University for the laboratory facilities.
Publisher Copyright:
© 2020 Elsevier Ltd
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2021/1
Y1 - 2021/1
N2 - Thin films of Cd1-xZnxS (CZS) nanostructures were prepared by chemical spray pyrolysis technique with different Zn-doping levels [(Cd1-xZnxS) in ‘x’ ratios of 0.00, 0.01, 0.03, 0.05 and 0.1 for 0%, 1%, 3%, 5% and 10 wt% of Zn respectively] on heated glass substrates at 350 °C. The effect of the Zn dopant on surface morphology and its effect on nonlinear optical (NLO) properties were investigated using atomic force microscopy (AFM) and Z-scan technique by Diode Pumped Solid State (DPSS) continuous-wave laser at 532 nm respectively. The surface roughness was found to be decreased with the increased Zn-doping on CdS. A significant red shift in the band edge and an increase in the transmittance of the films in the visible and NIR regions were also observed. The energy gap (Eg) of the prepared films was estimated and found to be enhanced by 3% i.e. in the range from 2.48 to 2.60 eV. The determined third-order NLO components such as nonlinear absorption coefficient (β), nonlinear refractive index (n2) and the susceptibility χ(3) were found to be in the range from 2.52 × 10−3 to 7.25 × 10−3 (cmW−1), 2.01 × 10−8 to 3.92 × 10−8 (cm2 W−1) and 1.30 × 10−6 to 2.67 × 10−6 (esu) respectively. The results indicate that NLO properties and photoluminescence of the prepared thin films can be tuned with surface morphology. This inspiring NLO results of Cd1-xZnxS thin film is a promising and capable material for optoelectronic device applications.
AB - Thin films of Cd1-xZnxS (CZS) nanostructures were prepared by chemical spray pyrolysis technique with different Zn-doping levels [(Cd1-xZnxS) in ‘x’ ratios of 0.00, 0.01, 0.03, 0.05 and 0.1 for 0%, 1%, 3%, 5% and 10 wt% of Zn respectively] on heated glass substrates at 350 °C. The effect of the Zn dopant on surface morphology and its effect on nonlinear optical (NLO) properties were investigated using atomic force microscopy (AFM) and Z-scan technique by Diode Pumped Solid State (DPSS) continuous-wave laser at 532 nm respectively. The surface roughness was found to be decreased with the increased Zn-doping on CdS. A significant red shift in the band edge and an increase in the transmittance of the films in the visible and NIR regions were also observed. The energy gap (Eg) of the prepared films was estimated and found to be enhanced by 3% i.e. in the range from 2.48 to 2.60 eV. The determined third-order NLO components such as nonlinear absorption coefficient (β), nonlinear refractive index (n2) and the susceptibility χ(3) were found to be in the range from 2.52 × 10−3 to 7.25 × 10−3 (cmW−1), 2.01 × 10−8 to 3.92 × 10−8 (cm2 W−1) and 1.30 × 10−6 to 2.67 × 10−6 (esu) respectively. The results indicate that NLO properties and photoluminescence of the prepared thin films can be tuned with surface morphology. This inspiring NLO results of Cd1-xZnxS thin film is a promising and capable material for optoelectronic device applications.
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U2 - 10.1016/j.mssp.2020.105400
DO - 10.1016/j.mssp.2020.105400
M3 - Article
AN - SCOPUS:85090577494
SN - 1369-8001
VL - 121
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
M1 - 105400
ER -